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BLF25M612,118

Description
RF MOSFET Transistors 2.4-2.5GHz 65V 19dB
Categorysemiconductor    Discrete semiconductor   
File Size962KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BLF25M612,118 Overview

RF MOSFET Transistors 2.4-2.5GHz 65V 19dB

BLF25M612,118 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
RoHSDetails
Id - Continuous Drain Current10 mA
Vds - Drain-Source Breakdown Voltage65 V
Rds On - Drain-Source Resistance1.3 Ohms
TechnologySi
Gain19 dB
Output Power12 W
Mounting StyleSMD/SMT
Package / CaseSOT-975A-2
PackagingCut Tape
PackagingMouseReel
PackagingReel
Operating Frequency2.4 GHz to 2.5 GHz
Factory Pack Quantity100
Vgs - Gate-Source Voltage13 V
BLF25M612; BLF25M612G
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLF25M612 and BLF25M612G are drivers designed for high power CW applications
and is assembled in a high performance ceramic package.
Table 1.
Typical performance
RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
CW
f
(MHz)
2450
V
DS
(V)
28
P
L(AV)
(W)
12
G
p
(dB)
19
D
(%)
60
1.2 Features and benefits
High efficiency
High power gain
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications in the frequency range 2400 MHz to
2500 MHz (this product is qualified according to the solid state cooking profile)

BLF25M612,118 Related Products

BLF25M612,118 BLF25M612,112 BLF25M612G,118
Description RF MOSFET Transistors 2.4-2.5GHz 65V 19dB RF MOSFET Transistors 2.4-2.5GHz 65V 19dB RF MOSFET Transistors 2.4-2.5GHz 65V 18dB
Product Attribute Attribute Value Attribute Value Attribute Value
Manufacturer NXP NXP NXP
Product Category RF MOSFET Transistors RF MOSFET Transistors RF MOSFET Transistors
RoHS Details Details Details
Id - Continuous Drain Current 10 mA 10 mA 10 mA
Vds - Drain-Source Breakdown Voltage 65 V 65 V 65 V
Rds On - Drain-Source Resistance 1.3 Ohms 1.3 Ohms 1.3 Ohms
Technology Si Si Si
Gain 19 dB 19 dB 18 dB
Output Power 12 W 12 W 12 W
Mounting Style SMD/SMT SMD/SMT SMD/SMT
Package / Case SOT-975A-2 SOT-975A-2 SOT-975C-2
Operating Frequency 2.4 GHz to 2.5 GHz 2.4 GHz to 2.5 GHz 2.4 GHz to 2.5 GHz
Factory Pack Quantity 100 180 100
Vgs - Gate-Source Voltage 13 V 13 V 13 V
Packaging Reel Tube Reel
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