DMN2005K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance
Very Low Gate Threshold Voltage, 0.9V Max.
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ESD Protected Gate
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Ordering & Date Code Information: See Below
Weight: 0.008 grams (Approximate)
Drain
D
SOT23
Body
Diode
Gate
Gate
Protection
Diode
G
Source
S
TOP VIEW
ESD protected
TOP VIEW
Equivalent Circuit
Ordering Information
Part Number
DMN2005K-7
Notes:
(Note 4)
Case
SOT23
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DM = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
Jan
1
2006
T
Feb
2
-
-
Mar
3
2017
E
Apr
4
2018
F
May
5
2019
G
Jun
6
2020
H
Jul
7
2021
I
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
DMN2005K
Document number: DS30734 Rev. 9 - 2
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DMN2005K
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current Per Element (Note 5)
Continuous
Pulsed (Note 6)
Symbol
V
DSS
V
GSS
I
D
Value
20
10
300
600
Unit
V
V
mA
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J
, T
STG
Value
350
357
-65 to +150
Unit
mW
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
½Y
fs
½
V
SD
Min
20
0.53
40
Typ
0.55
0.
0.7
Max
10
5
0.9
3.5
1.7
1.4
Unit
V
µA
µA
V
Ω
mS
V
Test Condition
V
GS
= 0V, I
D
= 100µA
V
DS
= 17V, V
GS
= 0V
V
GS
=
8V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 100µA
V
GS
= 1.8V, I
D
= 200mA
V
GS
= 2.7V, I
D
= 200mA
V
DS
= 3V, I
D
= 10mA
V
GS
= 0V, I
S
= 200mA
5. Device mounted on FR-4 PCB.
6. Pulse width
10μS,
Duty Cycle
1%.
7. Short duration pulse test used to minimize self-heating effect.
2.0
V
GS
= 4.5V
V
GS
= 2.5V
1.5
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
1.5
V
GS
= 2.0V
V
GS
= 1.8V
1.0
0.5
V
GS
= 1.5V
)
A
(
T 1.0
N
E
R
R
U
C
N
I
A
R
D 0.5
,
D
I
I
D
, DRAIN CURRENT (A)
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
0
0
V
GS
= 1.2V
0
5
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
0
0.5
1
1.5
2
2.5
V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3
DMN2005K
Document number: DS30734 Rev. 9 - 2
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DMN2005K
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
0.8
0.6
V
GS
= 1.8V
V
GS
= 2.5V
0.4
V
GS
= 4.5V
0.2
)
(
E
C
N
A
T
S
I
S
E
R
-
N
O
E
C
R
U
O
S
-
N
I
A
R
D
,
)
N
R
0.8
V
GS
= 4.5V
0.6
T
A
= 150°
C
0.4
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
0.2
T
A
= -55°
C
O
(
S
D
0
0
0.4
0.8
1.2
1.6
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
2
0
0
0.4
0.8
1.2
1.6
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
V
GS
= 4.5V
I
D
= 1.0A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.6
0.8
0.6
1.2
V
GS
= 2.5.V
V
GS
= 2.5V
I
D
= 500mA
0.4
V
GS
= 2.5V
I
D
= 500mA
1.0
0.2
0.8
V
GS
= 4.5V
I
D
= 1.0A
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE
(
o
C)
(癈 )
Fig. 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (癈 )
(
o
C)
Fig. 6 On-Resistance Variation with Temperature
1.2
)
V
(
E
G
A
T
L
O
V
D
L
O
H
S
E
R
H
T
E
T
A
G
,
)
H
V
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.0
1.6
0.8
I
D
= 250µA
I
D
= 1mA
0.6
0.4
) 1.2
A
(
T
N
E
R
R
U
C 0.8
E
C
R
U
O
S
,
S
0.4
I
I
S
, SOURCE CURRENT (A)
T
A
= 25°
C
T
(
S
G
0.2
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°
C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
-50
-25
0
0
0.2
0.4
0.6
0.8
1.0
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
DMN2005K
Document number: DS30734 Rev. 9 - 2
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60
50
f = 1MHz
C, CAPACITANCE (pF)
40
C
iss
30
20
10
0
0
C
oss
C
rss
5
10
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
20
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
All 7°
GAUGE PLANE
0.25
H
J
K1
K
a
A
M
L
L1
C
B
D
F
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
0°
8°
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
Y
Y1
C
Dimensions
C
X
X1
Y
Y1
Value (in mm)
2.0
0.8
1.35
0.9
2.9
X
X1
DMN2005K
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
www.diodes.com
DMN2005K
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