FDD8896 / FDU8896
April
2008
FDD8896 / FDU8896
N-Channel
30V, 94A, 5.7mΩ
PowerTrench
®
MOSFET
Features
• r
DS(ON)
= 5.7mΩ V
GS
= 10V, I
D
= 35A
,
,
• r
DS(ON)
= 6.8mΩ V
GS
= 4.5V, I
D
= 35A
tm
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
• High performance trench technology for extremely low
r
DS(ON)
• Low gate charge
Applications
• DC/DC converters
• High power and current handling capability
D
G
S
I-PAK
(TO-251AA)
G D S
G
D
D-PAK
TO-252
(TO-252)
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Note 1)
I
D
Continuous (T
C
=
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above
25
o
C
Operating and Storage Temperature
25
o
C,
V
GS
= 4.5V) (Note 1)
V
GS
= 10V, with R
θJA
=
52
o
C/W)
Continuous (T
amb
=
25
o
C,
94
85
17
Figure 4
168
80
0.53
-55 to 175
A
A
A
A
mJ
W
W/
o
C
o
C
Parameter
Ratings
30
±20
Units
V
V
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252,
1in
2
copper pad area
1.88
100
52
o
o
C/W
C/W
o
C/W
©2008 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. C2
FDD8896 / FDU8896
Package Marking and Ordering Information
Device Marking
FDD8896
FDU8896
F
Device
FDD8896
FDU8896
Package
TO-252AA
TO-251AA
Reel Size
13”
Tube
Tape Width
12mm
N/A
Quantity
2500 units
75 units
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
=
±20V
T
C
= 150 C
o
30
-
-
-
-
-
-
-
-
1
250
±100
V
µA
nA
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250µA
I
D
= 35A, V
GS
= 10V
r
DS(ON)
Drain to Source On Resistance
I
D
= 35A, V
GS
= 4.5V
I
D
= 35A, V
GS
= 10V,
T
J
= 175
o
C
1.2
-
-
-
-
2.5
V
Ω
0.0047 0.0057
0.0057 0.0068
0.0075 0.0092
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
(V
GS
= 10V)
-
-
V
DD
= 15V, I
D
= 35A
V
GS
= 10V, R
GS
= 6.2Ω
-
-
-
-
-
9
106
53
41
-
171
-
-
-
-
143
ns
ns
ns
ns
ns
ns
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V
I
D
= 35A
I
g
= 1.0mA
-
-
-
-
-
-
-
-
-
-
2525
490
300
2.1
46
24
2.3
6.9
4.6
9.8
-
-
-
-
60
32
3.0
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
nC
Switching Characteristics
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 35A
I
SD
= 15A
I
SD
= 35A, dI
SD
/dt = 100A/µs
I
SD
= 35A, dI
SD
/dt = 100A/µs
-
-
-
-
-
-
-
-
1.25
1.0
27
12
V
V
ns
nC
Notes:
1:
Package current limitation is 35A.
2:
Starting T
J
= 25°C, L = 0.43mH, I
AS
= 28A, V
DD
= 27V, V
GS
= 10V.
©2008 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. C2
FDD8896 / FDU8896
Typical Characteristics
T
C
= 25°C unless otherwise noted
1.2
100
CURRENT LIMITED
BY PACKAGE
I
D
, DRAIN CURRENT (A)
0
25
50
75
100
125
(
o
C)
150
175
75
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
50
0.4
25
0.2
0
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
SINGLE PULSE
0.01
10
-5
10
-4
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 4.5V
I = I
25
175 - T
C
150
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
DM
, PEAK CURRENT (A)
100
30
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
Figure 4. Peak Current Capability
©2008 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. C2
FDD8896 / FDU8896
Typical Characteristics
T
C
= 25°C unless otherwise noted
1000
10µs
I
D
, DRAIN CURRENT (A)
100
500
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
I
AS
, AVALANCHE CURRENT (A)
100
100µs
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
STARTING T
J
= 25
o
C
10
1ms
10ms
DC
1
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
STARTING T
J
= 150
o
C
60
1
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
Figure 5. Forward Bias Safe Operating Area
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
100
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80
T
C
= 25
o
C
V
GS
= 5V
60
V
GS
= 10V
40
V
GS
= 4V
80
I
D
, DRAIN CURRENT (A)
60
T
J
= 25
o
C
40
V
GS
= 3V
20
T
J
=
0
1.5
2.0
2.5
3.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
175
o
C
T
J
= -55
o
C
20
V
GS
= 2.5V
0
0
0.2
0.4
0.6
0.8
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
14
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
I
D
= 35A
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
12
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
Figure 8. Saturation Characteristics
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.4
10
1.2
8
1.0
6
I
D
= 1A
0.8
V
GS
= 10V, I
D
= 35A
4
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.6
-80
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
160
200
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2004 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. C1
FDD8896 / FDU8896
Typical Characteristics
T
C
= 25°C unless otherwise noted
1.2
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.2
I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
1.0
1.1
0.8
1.0
0.6
0.4
-80
-40
0
40
80
120
(
o
C)
160
200
0.9
-80
-40
0
40
80
120
(
o
C)
160
200
T
J
, JUNCTION TEMPERATURE
T
J
, JUNCTION TEMPERATURE
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
5000
C
ISS
=
C
GS
+ C
GD
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 15V
8
C, CAPACITANCE (pF)
1000
C
RSS
=
C
GD
C
OSS
≅
C
DS
+ C
GD
6
4
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 35A
I
D
= 5A
0
10
20
30
Q
g
, GATE CHARGE (nC)
40
50
2
V
GS
= 0V, f = 1MHz
100
0.1
0
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2008 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. C2
京公网安备 11010802033920号
EEWORLD
