97SD3240
1.25Gb SDRAM
8-Meg X 40-Bit X 4-Banks
Logic Diagram
(One Amplifier)
Memory
F
EATURES
:
• 1.25 Gigabit ( 8-Meg X 40-Bit X 4-Banks)
• RAD-PAK® radiation-hardened against natural space
radiation
• Total Dose Hardness:
>100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
SEL
TH
> 85 MeV/mg/cm2 @ 25°C
• JEDEC Standard 3.3V Power Supply
• Clock Frequency: 100 MHz Operation
• Operating tremperature: -55 to +125 °C
• Auto Refresh
• Single pulsed RAS
• 2 Burst Sequence variations
Sequential (BL =1/2/4/8)
Interleave (BL = 1/2/4/8)
• Programmable CAS latency: 2/3
• Power Down and Clock Suspend Modes
• LVTTL Compatible Inputs and Outputs
• Package: 132 Lead Quad Stack Pack Flat Package
D
ESCRIPTION
:
Maxwell Technologies’ Synchronous Dynamic Random
Access Memory (SDRAM) is ideally suited for space
applications requiring high performance computing and
high density memory storage. As microprocessors
increase in speed and demand for higher density mem-
ory escalates, SDRAM has proven to be the ultimate
solution by providing bit-counts up to 1.25 Gigabits and
speeds up to 100 Megahertz. SDRAMs represent a sig-
nificant advantage in memory technology over traditional
DRAMs including the ability to burst data synchronously
at high rates with automatic column-address generation,
the ability to interleave between banks masking pre-
charge time
Maxwell Technologies’ patented R
AD
-P
AK
®
packaging
technology incorporates radiation shielding in the micro-
circuit package. It eliminates the need for box shielding
for a lifetime in orbit or space mission. In a typical GEO
orbit, R
AD
-P
AK
®
provides greater than 100 krads(Si)
radiation dose tolerance. This product is available with
screening up to Maxwell Technologies self-defined Class
K.
All data sheets are subject to change without notice
01.11.05 Rev 2
1
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
©2005 Maxwell Technologies
All rights reserved.
1.25Gb (8-Meg X 40-Bit X 4-Banks) SDRAM
Pinout Description
97SD3240
Memory
The 97SD3240 Consists of 5, 8-Meg X 8-Bit X 4-Banks, die.
The 132 Pin 3-layer stack package contains 2die in layer one
and two and one die in layer three. CLK1 clocks die 1, 3 and 5,
while CLK2 clocks die 2 and 4.
CKE 1-5, CS 1-5 and DQM 1-5 correspond to one of the die:
CKE1, CS1 and DQM1 control D0 - D7
CKE2, CS2 and DQM2 control D8 - D15
CKE3, CS3 and DQM3 control D16 - D23
CKE4, CS4 and DQM4 control D24 - D31
CKE5, CS5 and DQM5 control D32 - D39
01.11.05 Rev 2
All data sheets are subject to change without notice
2
©2005 Maxwell Technologies
All rights reserved.
1.25Gb (8-Meg X 40-Bit X 4-Banks) SDRAM
‘
97SD3240
T
ABLE
1. A
BSOLUTE
M
AXIMUM
R
ATINGS
P
ARAMETER
Voltage on any pin relative to V
SS
Supply voltage relative to V
SS
Short circuit output current
Operating Temperature
Storage Temperature
S
YMBOL
V
IN
V
OUT
V
CC
I
OUT
T
OPR
T
STG
M
AX
-0.5 to VCC + 0.5
(< 4.6(max))
-0.5 to +4.6
50
-55 to +125
-65 to +150
U
NIT
V
V
mA
°C
°C
T
ABLE
2. R
ECOMMENDED
O
PERATING
C
ONDITIONS
(V
CC
= 3.3V + 0.3V, V
CC
Q = 3.3V + 0.3V, T
A
= -55
TO
125°C,
UNLESS OTHERWISE SPECIFIED
)
S
YMBOL
M
IN
M
AX
1,2
V
CC
, V
CCQ
3.0
3.6
3
V
SS
, V
SSQ
0
0
1,4
Input High Voltage
V
IH
2.0
V
CC
+ 0.3
1,5
Input Low Voltage
V
IL
-0.3
0.8
1. All voltage referred to VSS
2. The supply voltage with all
V
CC
and V
CCQ
pins must be on the same level
3. The supply voltage with all V
SS
and V
SSQ
pins must be on the same level
4.
5.
V
IH
(max) =
V
CC
+2.0V for pulse width
<3ns
at
V
CC
V
IL
(min) =
V
SS
-2.0V for pulse width
<3ns
at
V
SS
P
ARAMETER
Supply Voltage
U
NIT
V
V
V
V
Memory
T
ABLE
3. D
ELTA
L
IMITS
P
ARAMETER
I
CC1
I
CC2P
I
CC2PS
I
CC2N
I
CC2NS
D
ESCRIPTION
Operating Current
Power Down Standby Current
V
ARIATION1
±10%
±10%
±10%
Active Standby Current
I
CC3P
I
CC3PS
I
CC3N
I
CC3NS
1.
±10% of value specified in Table 4
T
ABLE
4. DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 3.3V + 0.3V, V
CC
Q = 3.3V + 0.3V, T
A
= -55
TO
125°C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Operating Current
1,2,3
S
YMBOL
I
CC1
T
EST
C
ONDITIONS
Burst length CAS Latency = 2
=1
CAS Latency = 3
t
RC
= min
CKE = V
IL
t
CK
= 12 ns
CKE = V
IL
t
CK
= 0
S
UBGROUPS
1, 2, 3
M
IN
M
AX
575
575
1, 2, 3
1, 2, 3
15
10
mA
mA
U
NITS
mA
Standby Current in Power Down
4
Standby Current in Power Down
( input signal stable)
5
I
CC2P
I
CC2PS
01.11.05 Rev 2
All data sheets are subject to change without notice
3
©2005 Maxwell Technologies
All rights reserved.
1.25Gb (8-Meg X 40-Bit X 4-Banks) SDRAM
T
ABLE
4. DC E
LECTRICAL
C
HARACTERISTICS
97SD3240
S
UBGROUPS
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
550
725
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
-3
-5
-1.5
2.4
1100
15
3
5
1.5
mA
mA
uA
uA
uA
V
M
IN
M
AX
100
45
20
15
150
75
U
NITS
mA
mA
mA
mA
mA
mA
mA
(V
CC
= 3.3V + 0.3V, V
CC
Q = 3.3V + 0.3V, T
A
= -55
TO
125°C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Standby Current in non power down
6
Standby Current in non power down
7
( Input signal stable)
Active standby current in
1,2,4
power down
Active standby current in power down
(input signal stable)
2,5
Active standby power in non power
down
1,2,6
Active standby current in non power
down ( input signal stable)
2,7
Burst Operating Current
1,2,8
CAS Latency = 2
CAS Latency = 3
Refresh Current
3
Self Refresh current
9
Input Leakage Current - CLK
Input Leakage Current - All Other
Output Leakage Current
Output high voltage
S
YMBOL
I
CC2N
I
CC2NS
I
CC3P
I
CC3PS
I
CC3N
I
CC3NS
I
CC4
T
EST
C
ONDITIONS
CKE, CS = V
IH
t
CK
= 12 ns
CKE = V
IH
t
CK
= 0
CKE = V
IL
t
CK
= 12 ns
CKE = V
IL
t
CK
= 0
CKE, CS1-6 = V
IH
t
CK
= 12 ns
CKE = V
IH
t
CK
= 0
t
CK
= min
BL = 4
t
RC
= min
V
IH
>V
CC
- 0.2V
V
IL
< 0.2 V
0<V
LI
<V
CC
0<V
LI
<V
CC
0<V
LO
<V
CC
I
OH
= -4mA
Memory
I
CC5
I
CC6
I
LI
I
LI
I
LO
V
OH
I
OL
= 4 mA
1, 2, 3
0.4
V
Output low voltage
V
OL
1. I
CC1
depends on output load conditions when the device is selected. I
CC1
(max) is specified with the output open.
2. One Bank Operation
3. Input signals are changed once per clock.
4. After power down mode, CLK operating current.
5. After power down mode, no CLK operating current.
6. Input signals are changed once per two clocks.
7. Input signals for V
IH
or V
IL
are fixed.
8. Input signals are changed once per four clocks.
9. After self refresh mode set, self refresh current. Use Self Refresh for temperatures less than 70
°C O
NLY
.
01.11.05 Rev 2
All data sheets are subject to change without notice
4
©2005 Maxwell Technologies
All rights reserved.
1.25Gb (8-Meg X 40-Bit X 4-Banks) SDRAM
T
ABLE
5. AC Electrical Characteristics
97SD3240
M
IN
10
7.5
T
YPICAL
M
AX
U
NIT
ns
(V
CC
=3.3V + 0.3V, V
CC
Q = 3.3V + 0.3V, T
A
= -55
TO
125°C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
System clock cycle time
1
(CAS latency = 2)
(CAS latency = 3)
CLK high pulse width
1,7
CLK low pulse width
1,7,
Access time from CLK
1,2
(CAS latency = 2)
(CAS latency = 3)
Data-out hold time
1,2,3
CLK to Data-out low impedance
1,2,3,7
CLK to Data-out high impedance
1,47,
(CAS latency = 2, 3)
Input setup time
1,5,6
CKE setup time for power down exit
1
Input hold time
1,6
Ref/Active to Ref/Active command period
1
Active to Precharge command period
1
Active command to column command
1
(same bank)
Precharge to Active command period
1
Write recovery or data-in to precharge lead time
1
Active( a) to Active (b) command period
1
Transition time(rise and fall)
7
Refresh Period
S
YMBOL
t
CK
S
UBGROUPS
9, 10, 11
t
CKH
t
CKL
t
AC
9, 10, 11
9, 10, 11
9, 10, 11
2.5
2.5
6
6
ns
ns
ns
t
OH
t
LZ
t
HZ
t
AS
, t
CS,
t
DS
, t
CES
t
CESP
t
AH
, t
CH
, t
DH
t
CEH
t
RC
t
RAS
t
RCD
t
RP
t
DPL
t
RRD
t
T
t
REF
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
@ 105 °C
@ 85 °C
2.7
2
5.4
1.5
1.5
1.5
70
50
20
20
20
20
1
16
32
64
5
6.4
16
8
120000
ns
ns
ns
ns
Memory
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
@ 70 °C
128
1. AC measurement assumes t
T
=1ns. Reference level for timing of input signals is 1.5V.
2. Access time is measured at 1.5V.
3. t
LZ
(min) definesthe time at which the outputs achieve the low impedance state.
4. t
HZ
(min) defines the time at which the outputs achieve the high impedance state.
5. tCES defines CKE setup time to CLK rising edge except for the power down exit command.
6. t
AS
/t
AH
: Address, t
CS
/t
CH
: /RAS, /CAS, /WE, DQM
7. Guarenteed by design (Not tested).
8. Guarenteed by Device Charactreization Testing. (Not 100% Tested)
01.11.05 Rev 2
All data sheets are subject to change without notice
5
©2005 Maxwell Technologies
All rights reserved.
Embedded System
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