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D44H11

Description
Bipolar Transistors - BJT 10A 80V 50W NPN
CategoryDiscrete semiconductor    The transistor   
File Size101KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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D44H11 Overview

Bipolar Transistors - BJT 10A 80V 50W NPN

D44H11 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, CASE 221A-09, 3 PIN
Contacts3
Manufacturer packaging code221A-09
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Other featuresLEADFORM OPTIONS ARE AVAILABLE
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
D44H Series (NPN),
D45H Series (PNP)
Complementary Silicon
Power Transistors
These series of plastic, silicon NPN and PNP power transistors can
be used as general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.
Features
http://onsemi.com
Low Collector−Emitter Saturation Voltage
Fast Switching Speeds
Complementary Pairs Simplifies Designs
These Devices are Pb−Free and are RoHS Compliant*
10 AMP COMPLEMENTARY
SILICON POWER
TRANSISTORS 60, 80 VOLTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
D44H8, D45H8
D44H11, D45H11
Emitter Base Voltage
Collector Current
Continuous
Collector Current
Peak (Note 1)
Total Power Dissipation
@ T
C
= 25°C
@ T
A
= 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
Value
60
80
5.0
10
20
70
2.0
−55
to +150
°C
1
Vdc
Adc
Adc
W
Unit
Vdc
1
BASE
EMITTER 3
4
1
BASE
EMITTER 3
V
EB
I
C
I
CM
P
D
MARKING
DIAGRAM
T
J
, T
stg
TO−220AB
CASE 221A−09
STYLE 1
2
3
D4xHyyG
AYWW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Width
v
6.0 ms, Duty Cycle
v
50%.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
1.8
62.5
275
Unit
°C/W
°C/W
°C
D4xHyy = Device Code
x = 4 or 5
yy = 8 or 11
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
D44H8G
D44H11G
D45H8G
D45H11G
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
D44H/D
©
Semiconductor Components Industries, LLC, 2013
September, 2013
Rev. 12
1
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