DS1217M
Nonvolatile Read/Write Cartridge
www.maxim-ic.com
GENERAL DESCRIPTION
The DS1217M is a nonvolatile RAM designed for
portable applications requiring a rugged and durable
package. The nonvolatile cartridge has memory
capacities from 64k x 8 to 512k x 8. The cartridge is
accessed in continuous 32k byte banks. Bank
switching is accomplished under software control by
pattern recognition from the address bus. A card
edge connector is required for connection to a host
system. A standard 30-pin connector can be used for
direct mount to a printed circuit board. Alternatively,
remote mounting can be accomplished with a ribbon
cable terminated with a 28-pin DIP plug. The remote
method can be used to retrofit existing systems that
have JEDEC 28-pin bytewide memory sites.
FEATURES
User Insertable
Data Retention Greater than 5 Years
Capacity to 512k x 8
Standard Bytewide Pinout Facilitates
Connection to JEDEC 28-Pin DIP Through
Ribbon Cable
Software-Controlled Banks Maintain 32 x 8
JEDEC 28-Pin Compatibility
Multiple Cartridges Can Reside on a Common
Bus
Automatic Write Protection Circuitry
Safeguards Against Data Loss
Manual Switch Unconditionally Protects Data
Compact Size and Shape
Rugged and Durable
Operating Temperature Range: 0°C to +70°C
ORDERING INFORMATION
PART
DS1217M
TEMP RANGE
0°C to +70°C
PIN-PACKAGE
30 Cartridge
PIN CONFIGURATION
TOP VIEW
Package Drawing appears at end of data sheet.
Note:
Some revisions of this device may incorporate deviations from published specifications known as errata. Multiple revisions of any device
may be simultaneously available through various sales channels. For information about device errata, click here:
www.maxim-ic.com/errata.
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REV: 111803
DS1217M Nonvolatile Read/Write Cartridge
ABSOLUTE MAXIMUM RATINGS
Voltage Range on Connection Relative to Ground
Operating Temperature Range
Storage Temperature Range
-0.3V to + 7.0V
0°C to +70°C
-40°C to +70°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is
not implied. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(T
A
= 0°C to +70°C)
PARAMETER
Power Supply Voltage
Input High Voltage
Input Low Voltage
SYMBOL
V
CC
V
IH
V
IL
CONDITIONS
MIN
4.5
2.2
0
TYP
5.0
MAX
5.5
V
CC
+0.8
UNITS
V
V
V
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V ±10%, T
A
= 0°C to +70°C.)
PARAMETER
Input Leakage Current
I/O Leakage Current
CE
V
IH
V
CC
Output Current at 2.4V
Output Current at 0.4V
Standby Current
CE
= 2.2V
Operating Current
SYMBOL
I
IL
I
IO
I
OH
I
OL
I
CCS1
I
CCO1
CONDITIONS
MIN
-60
-10
-1.0
+2.0
-2.0
+3.0
15
50
25
100
TYP
MAX
+60
+10
UNITS
A
A
mA
mA
mA
mA
CAPACITANCE
(T
A
= +25°C)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
OUT
CONDITIONS
MIN
TYP
MAX
100
100
UNITS
pF
pF
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DS1217M Nonvolatile Read/Write Cartridge
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V ±10%, T
A
= 0°C to +70°C.)
PARAMETER
Read Cycle Time
Access Time
OE
to Output Valid
CE
to Output Valid
OE
or
CE
to Output Active
Output High-Z from
Deselection
Output Hold from Address
Change
Read Recovery Time
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High-Z from
WE
Output Active from
WE
Data Setup Time
Data Hold Time from
WE
SYMBOL
t
RC
t
ACC
t
OE
t
CO
t
COE
t
OD
t
OH
t
RR
t
WC
t
WP
t
AW
t
WR
t
ODW
t
OEW
t
DS
t
DH
(Note 1)
(Note 1)
(Note 3)
(Note 3)
5
100
20
(Note 2)
(Note 1)
(Note 1)
5
40
250
170
0
20
100
5
125
CONDITIONS
MIN
250
250
125
210
TYP
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note 1:
Note 2:
Note 3:
These parameters are sampled with a 5pF load and are not 100% tested.
t
WP
is specified as the logical AND of
CE
and
WE
t
WP
is measured from the latter of
CE
or
WE
going low to the earlier of
CE
or
WE
going high.
t
DH
, t
DS
are measured form the earlier of
CE
or
WE
going high.
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DS1217M Nonvolatile Read/Write Cartridge
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DS1217M Nonvolatile Read/Write Cartridge
POWER-DOWN/POWER-UP CONDITION
POWER-DOWN/POWER-UP TIMING
(T
A
= 0°C to +70°C)
PARAMETER
CE
at V
IH
Before Power-Down
V
CC
Slew from 4.5V to 0
(CE at V
IH
)
V
CC
Slew from 0 to 4.5V
(CE at V
IH
)
CE
at V
IH
After Power-Up
(T
A
= +25°C)
PARAMETER
Expected Data Retention
Time
SYMBOL
t
DR
CONDITIONS
(Note 10)
MIN
5
TYP
MAX
UNITS
years
SYMBOL
t
PD
t
F
t
R
t
REC
(Note 9)
CONDITIONS
(Note 9)
MIN
0
100
0
2
125
TYP
MAX
UNITS
s
s
s
ms
WARNING:
Under no circumstances are negative undershoots of any amplitude allowed when the device is in
battery-backup mode.
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
Note 10:
WE
is high for a read cycle.
OE
= V
IH
or V
IL
. If
OE
= V
IH
during a write cycle, the output buffers remain in a high-impedance state.
If the
CE
low transition occurs simultaneously with or later than the
WE
high transition in Write Cycle 1, that output buffers remain in
a high-impedance state in this period.
If the
CE
high transition occurs prior to or simultaneously with the
WE
high transition in Write Cycle 1, the output buffers remain in a
high-impedance state in this period.
If
WE
is low or the
WE
low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high-
impedance state in this period.
Removing and installing the cartridge with power applied may disturb data.
Each DS1217M I smarked with a 4-digit code AABB. AA designates the year of manufacture. BB designates the week of
manufacture. The expected t
DR
is defined as starting at the date of manufacture. This parameter is assured by component selection,
process control, and design. It is not measured directly during production testing.
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