TQP0104
30 W, DC to 4 GHz, GaN Power Transistor
Applications
•
•
•
•
•
•
W-CDMA / LTE
Macrocell Base Station Driver
Microcell Base Station
Small Cell Final Stage
Active Antenna
General Purpose Applications
20 Pin 3x4mm QFN
Product Features
•
•
•
•
•
Operating Frequency Range: DC to 4 GHz
Output Power (P
SAT
): 30 W
Drain Efficiency: 64%
Linear Gain: 17 dB
Package Dimensions: 3 x 4 x 0.85 mm
Functional Block Diagram
N/C
N/C
20
19
18
17
N/C
N/C
V
G
, RF In
V
G
, RF In
V
G
, RF In
V
G
, RF In
V
G
, RF In
V
G
, RF In
1
16
V
D
, RF Out
V
D
, RF Out
V
D
, RF Out
V
D
, RF Out
V
D
, RF Out
V
D
, RF Out
2
15
3
14
4
13
5
12
6
11
7
N/C
8
N/C
9
N/C
10
N/C
General Description
The TQP0104 is a wide band over-molded QFN discrete
GaN power amplifier. The device is a single stage
unmatched power amplifier transistor.
The TQP0104 can be used in Doherty architecture for
the final stage of a base station power amplifier for small
cell, microcell, and active antenna systems. The
TQP0104 can also be used as a driver in a macrocell
base station power amplifier.
The wide bandwidth of the TQP0104 makes it suitable
for many different applications from DC to 4 GHz.
TQP0104 can deliver P
SAT
of 30 W at 28 to 32 V
operation.
Lead-free and ROHS compliant.
Pin Configuration
Pin No.
1-6
7-10, 17-20
11-16
Backside Paddle
Label
RF IN, V
G
N/C
RF OUT, V
D
RF/DC GND
Ordering Information
Part No.
ECCN Description
TQP0104
EAR99 30 W, DC to 4 GHz, GaN PA
TQP0104-2.6-EVB EAR99 2.5-2.7 GHz Eval Board
TQP0104-2.1-DOH EAR99 2.1 GHz Doherty Eval Board
Preliminary Datasheet: Rev F 09-28-15
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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TQP0104
30 W, DC to 4 GHz, GaN Power Transistor
Absolute Maximum Ratings
Parameter
Rating
Gate Voltage (V
G
)
−6 V
Drain Voltage (V
D
)
+40 V
Peak RF Input Power
35 dBm
VSWR Mismatch, P1dB Pulse (20%
10:1
duty cycle, 100 µs width), T = 25°
C
Storage Temperature
−65 to +150°
C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Recommended Operating Conditions
Parameter
Operating Temperature
Gate Voltage (V
G
)
Drain Voltage (V
D
)
Quiescent Current (I
CQ
)
T
CH
for >10
6
hours MTTF
Min
−40
Typ
−2.9
32
60
Max Units
+105
°
C
V
V
mA
°
C
225
Electrical performance is measured under conditions noted in
the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: V
G
= −2.73 V, V
D
= 32 V, I
CQ
= 70 mA, T = 25° 2.6 GHz single-ended applications circuit
C,
Parameter
Conditions
Min
DC
60
15
44.0
60
Typ
70
17
44.6
64
11
Max
4000
80
Units
MHz
mA
dB
dBm
%
dB
Frequency Range
Quiescent Current
Linear Gain
P
OUT
= 33 dBm, Pulsed (10% duty cycle, 100 µs width)
P3dB
Pulsed (10% duty cycle, 100 µs width)
Drain Efficiency
P3dB
Input Return Loss
Preliminary Datasheet: Rev F 09-28-15
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com
TQP0104
30 W, DC to 4 GHz, GaN Power Transistor
Thermal Information
Parameter
Thermal Resistance at
Average Power (θ
JC
)
Thermal Resistance at
Saturated Power (θ
JC
)
Conditions
T
CASE
= 85°C, T
CH
= 128.0°C,
CW: P
DISS
= 8.83 W, P
OUT
= 1.90 W
T
CASE
= 85°C, T
CH
= 173.3°C,
CW: P
DISS
= 16.80 W, P
OUT
= 30.55 W
Value
4.9
5.3
Units
°
C/W
°
C/W
Notes:
1. Thermal resistance measured to package backside.
Median Lifetime
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
25
Median Lifetime vs. Channel Temperature
Median Lifetime (Hours)
50
75
100
125
150
175
200
225
250
275
Channel Temperature (°
C)
Preliminary Datasheet: Rev F 09-28-15
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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TQP0104
30 W, DC to 4 GHz, GaN Power Transistor
TQP0104 Single-Ended Evaluation Board Layout (2500-2700 MHz)
Bill of Materials – TQP0104 Single-Ended Evaluation Board (2500-2700 MHz)
Reference Des.
C1, C2, C3, C4
L1, L2
C9
R1
C5, C6
R2
R3
C7
R4
C8
Value
10.0 pF
1.8 nH
1.5 pF
20
1000 pF
10
1000
1 µF
0
220 µF
Description
Capacitor
Inductor
Capacitor
Resistor
Capacitor
Resistor
Resistor
Capacitor
Jumper
Capacitor, Electrolytic
Manuf.
ATC
Coilcraft
ATC
Venkel
various
Venkel
Venkel
various
Venkel
various
Part Number
600S
0603HP
600S
0603-8 LCR
0603-8 LCR
0603-8 LCR
0603-8 LCR
Preliminary Datasheet: Rev F 09-28-15
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com
TQP0104
30 W, DC to 4 GHz, GaN Power Transistor
Performance Plots – TQP0104 Single-Ended Eval. Board (2500-2700 MHz)
Test conditions unless otherwise noted: V
D
= 32 V, I
CQ
= 70 mA, T = 25° 2.6 GHz single-ended application circuit
C,
20
19
18
17
Gain vs. Output Power
V
G
= −2.73 V, V
D
= 32 V, I
CQ
= 70 mA
Pulse CW: Duty Cycle = 20%, Pulse Period = 500 µs
80
70
Drain Efficiency vs. Output Power
V
G
= −2.73 V, V
D
= 32 V, I
CQ
= 70 mA
Pulse CW: Duty Cycle = 20%, Pulse Period = 500 µs
Drain Efficiency (%)
60
50
40
30
20
10
2500 MHz
2600 MHz
2700 MHz
Gain (dB)
16
15
14
13
12
11
Temp. = +25°
C
2500 MHz
2600 MHz
2700 MHz
Temp. = +25°
C
10
24
26
28
30
32
34
36
38
40
42
44
46
0
24
26
28
30
32
34
36
38
40
42
44
46
Output Power (dBm)
Output Power (dBm)
20
19
18
Gain vs. Average Output Power
V
G
= −3.01 V, V
D
= 32 V, I
CQ
= 70 mA
WCDMA, PAR = 8 dB @ 0.01% CCDF
Temp. = +25°
C
80
70
Drain Efficiency vs. Average Output Power
V
G
= −3.01 V, V
D
= 32 V, I
CQ
= 70 mA
WCDMA, PAR = 8 dB @ 0.01% CCDF
Temp. = +25°
C
Gain (dB)
17
16
15
2500 MHz
Drain Efficiency (%)
60
50
40
30
20
2500 MHz
14
13
12
30
31
2600 MHz
2700 MHz
10
0
32
33
34
35
36
37
38
39
40
41
30
31
32
33
34
35
36
2600 MHz
2700 MHz
37
38
39
40
41
Average Output Power (dBm)
Average Output Power (dBm)
48
Peak Power vs. Average Output Power
V
G
= −3.01 V, V
D
= 32 V, I
CQ
= 70 mA
WCDMA, PAR = 8 dB @ 0.01% CCDF
Temp. = +25°
C
-20
-22
-24
-26
ACPR vs. Average Output Power
V
G
= −3.01 V, V
D
= 32 V, I
CQ
= 70 mA
WCDMA, PAR = 8 dB @ 0.01% CCDF
Temp. = +25°
C
Peak Power at 0.01% CCDF (dB)
47
46
45
43
42
41
40
39
38
37
36
30
44
ACPR (dBc)
-28
-30
-32
-34
-36
-38
-40
-42
2500 MHz
2600 MHz
2700 MHz
2500 MHz
2600 MHz
2700 MHz
31
32
33
34
35
36
37
38
39
40
41
30
31
32
33
34
35
36
37
38
39
40
41
Average Output Power (dBm)
Average Output Power (dBm)
Preliminary Datasheet: Rev F 09-28-15
© 2014 TriQuint
-
5 of 12
-
Disclaimer: Subject to change without notice
www.triquint.com
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