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MRF6V4300NBR1

Description
RF MOSFET Transistors VHV6 300W TO272WB4
CategoryDiscrete semiconductor    The transistor   
File Size865KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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MRF6V4300NBR1 Overview

RF MOSFET Transistors VHV6 300W TO272WB4

MRF6V4300NBR1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-272
package instructionFLANGE MOUNT, R-PDFM-F4
Contacts4
Manufacturer packaging codeCASE 1484-04
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage110 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JEDEC-95 codeTO-272
JESD-30 codeR-PDFM-F4
JESD-609 codee3
Humidity sensitivity level3
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature225 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Freescale Semiconductor
Technical Data
Document Number: MRF6V4300N
Rev. 3, 4/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
Typical CW Performance: V
DD
= 50 Volts, I
DQ
= 900 mA, P
out
= 300 Watts,
f = 450 MHz
Power Gain — 22 dB
Drain Efficiency — 60%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6V4300NR1
MRF6V4300NBR1
10-
-600 MHz, 300 W, 50 V
LATERAL N-
-CHANNEL
SINGLE-
-ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486-
-03, STYLE 1
TO-
-270 WB-
-4
PLASTIC
MRF6V4300NR1
CASE 1484-
-04, STYLE 1
TO-
-272 WB-
-4
PLASTIC
MRF6V4300NBR1
PARTS ARE SINGLE-
-ENDED
RF
in
/V
GS
RF
out
/V
DS
RF
in
/V
GS
RF
out
/V
DS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Figure 1. Pin Connections
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
©
Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
MRF6V4300NR1 MRF6V4300NBR1
1
RF Device Data
Freescale Semiconductor

MRF6V4300NBR1 Related Products

MRF6V4300NBR1 MRF6V4300NR5 MRF6V4300NBR5
Description RF MOSFET Transistors VHV6 300W TO272WB4 RF MOSFET Transistors VHV6 300W TO270WB4 RF MOSFET Transistors VHV6 300W Latrl N-Ch SE Broadband MOSFET
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? conform to conform to conform to
Maker NXP NXP NXP
Reach Compliance Code not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99
JESD-609 code e3 e3 e3
Humidity sensitivity level 3 3 3
Peak Reflow Temperature (Celsius) 260 260 260
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Maximum time at peak reflow temperature 40 40 40
Brand Name - Freescale Freescale
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