MUBW 10-06 A7
Converter - Brake - Inverter Module
(CBI2)
21
D11
1
D12
D13
2
D14
D15
7
3
D16
14
23
24
8
NTC
T7
22
D7
T1
16
15
6
T2
11
10
D2
12
D1
T3
18
17
T4
D3
T5
20
19
T6
13
D5
5
D4
4
D6
B4
9
Three Phase
Rectifier
V
RRM
= 1600V
I
DAVM
= 26 A
I
FSM
= 160 A
Brake Chopper
V
CES
= 600 V
I
C25
= 20 A
V
CE(sat)
= 1.9 V
Three Phase
Inverter
V
CES
= 600 V
I
C25
= 20 A
V
CE(sat)
= 1.9 V
Application: AC motor drives with
●
Input Rectifier Bridge D11 - D16
Symbol
V
RRM
I
FAV
I
DAVM
I
FSM
P
tot
T
C
= 80°C; sine 180°
T
C
= 80°C; rectangular; d = 1/3
T
VJ
= 25°C; t = 10 ms; sine 50 Hz
T
C
= 25°C
Conditions
Maximum Ratings
1600
19
18
160
85
V
A
A
A
W
●
●
Input from single or three phase grid
Three phase synchronous or
asynchronous motor
electric braking operation
Features
●
●
●
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
1.3
1.3
1
1
1.6
0.1
V
V
mA
mA
µs
1.47 K/W
●
V
F
I
R
t
rr
R
thJC
I
F
= 10 A; T
VJ
= 25°C
T
VJ
= 125°C
V
R
= V
RRM
; T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 100 V; I
F
= 10 A; di/dt = -10 A/µs
(per diode)
●
●
High level of integration - only one power
semiconductor module required for the
whole drive
Fast rectifier diodes for enhanced EMC
behaviour
NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
ruggedness
Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
Temperature sense included
© 2002 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
1-8
203
MUBW 10-06 A7
Output Inverter T1 - T6
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
RBSOA
t
SC
(SCSOA)
P
tot
Conditions
T
VJ
= 25°C to 150°C
Continuous
Transient
T
C
= 25°C
T
C
= 80°C
V
GE
=
±
15 V; R
G
= 82
Ω;
T
VJ
= 125°C
Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
=
±
15 V; R
G
= 82
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Maximum Ratings
600
±
20
±
30
20
15
I
CM
=
20
V
CEK
≤
V
CES
10
85
V
V
V
A
A
A
µs
W
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at T
J
= 125°C)
V
0
= 1.11V; R
0
= 19 m
Ω
T1 - T6 / D1 - D6
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 0.89 V; R
0
= 122 m
Ω
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.09 V; R
0
= 12 m
Ω
T7 / D7
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 0.89 V; R
0
= 122 m
Ω
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.07 V; R
0
= 23 m
Ω
B4
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
1.9
2.1
4.5
0.4
200
35
35
230
30
0.4
0.3
600
39
2.3
6.5
0.6
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
1.5 K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 10 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 0.4 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
Thermal Response
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 82
Ω
D11 - D16
Rectifier Diode (typ.)
C
th1
= 0.093 J/K; R
th1
= 1.212 K/W
C
th2
= 0.778 J/K; R
th2
= 0.258 K/W
T1 - T6 / D1 - D6
IGBT (typ.)
C
th1
= 0.065 J/K; R
th1
= 1.766 K/W
C
th2
= 0.636 J/K; R
th2
= 0.344 K/W
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300V; V
GE
= 15 V; I
C
= 10 A
(per IGBT)
Output Inverter D1 - D6
Symbol
I
F25
I
F80
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
30
20
A
A
Free Wheeling Diode (typ.)
C
th1
= 0.065 J/K; R
th1
= 1.766 K/W
C
th2
= 0.636 J/K; R
th2
= 0.344 K/W
T7 / D7
Symbol
V
F
I
RM
t
rr
R
thJC
Conditions
I
F
= 10 A; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 15 A; di
F
/dt = -400 A/µs; T
VJ
= 125°C
V
R
= 300 V; V
GE
= 0 V
(per diode)
Characteristic Values
min.
typ. max.
1.7
1.2
13
90
2.0
V
V
A
ns
2.1 K/W
IGBT (typ.)
C
th1
= 0.071 J/K; R
th1
= 1.211 K/W
C
th2
= 0.726 J/K; R
th2
= 0.293 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.043 J/K; R
th1
= 2.738 K/W
C
th2
= 0.54 J/K; R
th2
= 0.462 K/W
© 2002 IXYS All rights reserved
2-8
MUBW 10-06 A7
Input Rectifier Bridge D11 - D16
50
A
40
I
F
30
T
VJ
= 125°C
T
VJ
= 25°C
60
10
20
40
T
VJ
= 150°C
2
100
50Hz, 80% V
RRM
A
80
I
FSM
T
VJ
= 45°C
I
2
t
10
3
A
2
s
T
VJ
= 45°C
T
VJ
= 150°C
10
20
0
0.0
0.4
0.8
1.2
V
F
1.6 V
2.0
0
0.001
10
1
0.01
0.1
t
s
1
1
2
3
4 5 6 7 8 910
ms
t
B4
Fig. 1 Forward current versus voltage
drop per diode
500
W
400
P
tot
300
Fig. 2 Surge overload current
Fig. 3 I
2
t versus time per diode
60
A
50
I
d(AV)
40
200
R
thA
:
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W
1 K/W
2 K/W
5 K/W
30
20
100
10
0
0
20
40
60
80
I
d(AV)M
A
0
20
40
60
80 100 120 140 °C
T
amb
0
0
20 40 60 80 100 120 140 °C
T
C
Fig. 4
1.6
K/W
1.2
Z
thJC
Power dissipation versus direct output current and ambient temperature, sin 180°
Fig. 5 Max. forward current versus
case temperature
0.8
0.4
0.0
0.001
DWF N9-16
0.01
0.1
1
t
s
10
Fig. 6 Transient thermal impedance junction to case
© 2002 IXYS All rights reserved
5-8
stm32/stm8
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