DMG4N60SCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
(@ T
J
Max)
650V
R
DS(ON)
2.5Ω@V
GS
= 10V
I
D
T
C
= +25°
C
4.5A
Features
Low Input Capacitance
High BV
DSS
Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: TO220AB
Case Material: Molded Plastic, “Green” Molding Compound, UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: TO220AB – 1.85 grams (Approximate)
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
TO220AB
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information
(Note 4)
Part Number
DMG4N60SCT
Notes:
Case
TO220AB
Packaging
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
4N60SCT
YYWW
= Manufacturer’s Marking
4N60SCT = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 16 = 2016)
WW or WW = Week Code (01 to 53)
DMG4N60SCT
Document number: DS38642 Rev. 3 - 2
1 of 6
www.diodes.com
May 2016
© Diodes Incorporated
DMG4N60SCT
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= 10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Avalanche Current, L = 60mH (Note 6)
Avalanche Energy, L = 60mH (Note 6)
Steady
State
T
C
= +25°
C
T
C
= +100°
C
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
I
AS
E
AS
Value
600
±30
4.5
3
6
6
1.7
90
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
T
C
= +25°
C
T
C
= +100°
C
Symbol
P
D
R
JA
R
JC
T
J,
T
STG
Value
113
45
58
1.1
-55 to +150
Unit
W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
600
2.5
Typ
2.0
532
47
4
3.3
14.3
3.3
6.9
14
34
32
25
229
1564
Max
1
100
4.5
2.5
1.4
Unit
V
µA
nA
V
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 600V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 2A
V
GS
= 0V, I
S
= 1A
V
DS
= 25V, f = 1.0MHz,
V
GS
= 0
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DD
= 480V, I
D
= 4A,
V
GS
= 10V
pF
nC
ns
V
DD
= 300V, R
G
= 25, I
D
= 4A,
V
GS
= 10V
dI/dt = 100A/μs, V
DS
= 100V,
I
F
= 4A
ns
nC
5. Device mounted on an infinite heatsink.
6. Guaranteed by design. Not subject to production testing.
7. Short duration pulse test used to minimize self-heating effect.
DMG4N60SCT
Document number: DS38642 Rev. 3 - 2
2 of 6
www.diodes.com
May 2016
© Diodes Incorporated
DMG4N60SCT
4.0
3.5
I
D
, DRAIN CURRENT (A)
3.0
2.5
2.0
1.5
1.0
V
GS
= 5.0V
0.5
V
GS
= 4.5V
0.0
0
1
2
3
4
5
6
7
8
9
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
10
0.001
0
2
3
4
5
6
7
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
1
8
V
GS
= 6.0V
V
GS
= 10.0V
1
V
DS
= 10.0V
V
GS
= 7.0V
I
D
, DRAIN CURRENT (A)
V
GS
= 8.0V
0.1
0.01
85
o
C
150
o
C
25
o
C
125
o
C
-55
o
C
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
3
6
5
2.5
4
2
3
I
D
= 2.0A
2
V
GS
= 10.0V
1.5
1
1
0
0.5
1
1.5
2
2.5
3
3.5
4
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current
and Gate Voltage
0
0
5
10
15
20
25
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
30
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
8
7
6
5
4
125
o
C
3
2
25
o
C
1
-55
o
C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current
and Temperature
85
o
C
150
o
C
V
GS
= 10V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
3
2.5
2
1.5
1
V
GS
= 10V, I
D
= 2A
0.5
0
-50
-25
0
25
50
75 100 125
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with
Temperature
150
DMG4N60SCT
Document number: DS38642 Rev. 3 - 2
3 of 6
www.diodes.com
May 2016
© Diodes Incorporated
DMG4N60SCT
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
6
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
-50
-25
0
25
50
75 100 125
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with
Temperature
V
GS
= 0V
4
I
S
, SOURCE CURRENT (A)
8
150
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
I
D
= 250µA
I
D
= 1mA
5
4
3
2
V
GS
= 10V, I
D
= 2A
1
0
5
10
2
T
A
= 150
o
C
1
T
A
=
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
10
R
DS(ON)
Limited
125
o
C
T
A
= 85
o
C
T
A
= 25
o
C
T
A
= -55
o
C
V
GS
(V)
3
6
V
DS
= 480V, I
D
= 4A
4
2
0
0
2
4
6
Q
g
(nC)
Figure 10. Gate Charge
8
10
12
I
D
, DRAIN CURRENT (A)
1
P
W
= 10µs
P
W
= 1µs
P
W
= 100µs
P
W
= 1ms
0.1
T
J(Max)
= 150℃
T
C
= 25℃
Single Pulse
DUT on Infinite Heatsink
V
GS
= 10V
0.01
1
P
W
= 10ms
P
W
= 100ms
P
W
= 1s
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11. SOA, Safe Operation Area
1000
DMG4N60SCT
Document number: DS38642 Rev. 3 - 2
4 of 6
www.diodes.com
May 2016
© Diodes Incorporated
DMG4N60SCT
1
D=0.9
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.7
0.01
D=0.02
D=0.01
D=0.005
D=Single Pulse
R
θJC
(t) = r(t) * R
θJC
R
θJC
= 1.1℃/W
Duty Cycle, D = t1 / t2
0.0001
0.001
0.01
0.1
1
10
0.001
1E-06
1E-05
t1, PULSE DURATION TIME (sec)
Figure 12. Transient Thermal Resistance
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO220AB
E
E/2
Q
A
A1
Ø P
H1
H1
D2
D
D1
L2
E1
L1
A2
L
b2
b
e
e1
c
TO220AB
Dim Min Max Typ
A
3.56 4.82
-
A1
0.51 1.39
-
A2
2.04 2.92
-
b
0.39 1.01 0.81
b2
1.15 1.77 1.24
c
0.356 0.61
-
D
14.22 16.51
-
D1
8.39 9.01
-
D2
11.45 12.87
-
e
-
-
2.54
e1
-
-
5.08
E
9.66 10.66
-
E1
6.86 8.89
-
H1
5.85 6.85
-
L
12.70 14.73
-
L1
-
6.35
-
L2
15.80 16.20 16.00
P
3.54 4.08
-
Q
2.54 3.42
-
All Dimensions in mm
DMG4N60SCT
Document number: DS38642 Rev. 3 - 2
5 of 6
www.diodes.com
May 2016
© Diodes Incorporated
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