ZXMN3F30FH
30V SOT23 N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
30
R
DS(on)
(Ω)
0.047 @ V
GS
= 10V
0.065 @ V
GS
= 4.5V
I
D
(A)
4.6
4.0
Description
This new generation Trench MOSFET from Zetex features low on-
resistance achievable with 4.5V gate drive.
Features
•
•
•
Low on-resistance
4.5V gate drive capability
SOT23
D
G
S
Applications
•
•
•
DC-DC Converters
Power management functions
Motor Control
Ordering information
DEVICE
ZXMN3F30FHTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity
per reel
3000
S
D
G
Top view
Device marking
KNA
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
ZXMN3F30FH
Absolute maximum ratings
Parameter
Drain source voltage
Gate source voltage
Continous Drain Current @ V
GS
=4.5; T
A
=25°C
(b)
@ V
GS
=4.5; T
A
=70°C
(b)
@ V
GS
=4.5; T
A
=25°C
(a)
Pulsed drain current
(c)
Continuous source current (body diode)
(b)
Pulsed source current (body diode)
(c)
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T
A
=25°C
(b)
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
P
D
Symbol
V
DSS
V
GS
I
D
Limit
30
±20
4.6
3.7
3.8
21
2.2
21
0.95
7.6
1.4
11.2
-55 to 150
Unit
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
°C
I
DM
I
S
I
SM
P
D
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to lead
(d)
Symbol
R
JA
R
JA
R
JL
Limit
131
89
68
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
≤
5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300μs - pulse width limited by maximum junction
temperature.
(d) Thermal resistance from junction to solder-point (at the end of the drain lead).
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
2
www.zetex.com
ZXMN3F30FH
Thermal characteristics
Issue 2 - February 2008
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3
www.zetex.com
ZXMN3F30FH
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Static
Drain-Source breakdown
Voltage
Zero gate voltage drain
current
Gate-body leakage
Gate-Source threshold
voltage
Static Drain-Source
on-state resistance
(*)
Forward
transconductance
(*)(†)
Dynamic
(†)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Switching
(†) (‡)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gatecharge
Gate-Source charge
Gate-Drain charge
Source-drain diode
Diode forward voltage
(*)
Reverse recovery time
(†)
V
SD
t
rr
0.73
12
4.8
1.2
V
ns
nC
I
S
= 1.25A, V
GS
=0V
T
j
=25
o
C, I
F
=1.6A
di/dt=100A/ s
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
1.6
2.6
17
9.3
7.7
1
1.8
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 2.5A
V
DD
= 15V, V
GS
= 10V
I
D
= 1A
R
G
≈
6.0Ω
C
iss
C
oss
C
rss
318
75
45
pF
pF
pF
V
DS
= 15V, V
GS
=0V
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
5.2
1.0
30
0.5
100
3.0
0.047
0.065
V
μA
nA
V
Ω
Ω
S
I
D
= 250μA, V
GS
=0V
V
DS
= 30V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
= 250μA, V
DS
=V
GS
V
GS
= 10V, I
D
= 3.2A
V
GS
= 4.5V, I
D
= 2.8A
V
DS
= 15V, I
D
= 2.5A
Symbol
Min.
Typ.
Max.
Unit
Conditions
Reverse recovery charge
(†)
Q
rr
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤
300μs; duty cycle
≤2%.
(†) For design aid only, not subject to production testing.
(‡) Switching characteristics are independent of operating junction temperature.
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
4
www.zetex.com
ZXMN3F30FH
Typical characteristics
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
5
www.zetex.com
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