MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA60H1317M
135-175MHz 60W 12.5V MOBILE RADIO
BLOCK DIAGRAM
DESCRIPTION
The RA60H1317M is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 135- to
175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
V
GG
=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=12.5V, V
GG
=0V)
• P
out
>60W,
η
T
>40% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
2
3
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
ORDERING INFORMATION:
ORDER NUMBER
RA60H1317M-E01
RA60H1317M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA60H1317M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA60H1317M
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
f=135-175MHz,
Z
G
=Z
L
=50Ω
RATING
17
6
100
75
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
MIN
135
60
TYP
MAX
175
UNIT
MHz
W
%
Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
40
-25
3:1
1
dBc
—
mA
—
—
V
DD
=10.0-15.2V, P
in
=25-70mW,
P
out
<70W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=60W (V
GG
control),
Load VSWR=8:1
No parasitic oscillation
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.
RA60H1317M
MITSUBISHI ELECTRIC
2/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA60H1317M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
Now Preparing
RA60H1317M
MITSUBISHI ELECTRIC
3/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA60H1317M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
Now Preparing
RA60H1317M
MITSUBISHI ELECTRIC
4/9
23 Dec 2002
Embedded System
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