Power Transistors
2SC5954
Silicon NPN triple diffusion planar type
Unit: mm
For power amplification with high forward current transfer ratio
■
Features
•
High forward current transfer ratio h
FE
which has satisfactory linearity.
•
Low collector-emitter saturation voltage V
CE(sat)
•
Full-pack package which can be installed to the heat sink with one
screw.
9.9
±0.3
3.0
±0.5
4.6
±0.2
2.9
±0.2
13.7
±0.2
4.2
±0.2
Solder Dip
15.0
±0.5
φ
3.2
±0.1
1.4
±0.2
1.6
±0.2
0.8
±0.1
2.6
±0.1
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
80
60
6
3
6
25
2.0
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
0.55
±0.15
2.54
±0.30
5.08
±0.50
1
2
3
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
B
E
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
CEO
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
=
10 mA, I
B
=
0
V
CB
=
80 V, I
E
=
0
V
CE
=
40 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
4 V, I
C
=
0.5 A
V
CE
=
4 V, I
C
=
3 A
I
C
=
1 A, I
B
=
20 mA
V
CE
=
10 V, I
C
=
0.1 A, f
=
10 MHz
I
C
=
1 A, Resistance loaded
I
B1
=
0.1 A, I
B2
= −
0.1 A
V
CC
=
50 V
200
0.2
1.5
0.1
500
100
0.6
V
MHz
µs
µs
µs
Min
60
100
100
100
2 300
Typ
Max
Unit
V
µA
µA
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
500 to 1 500
P
1 300 to 2 300
Publication date: July 2004
SJD00319AED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
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tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
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•
Any applications other than the standard applications intended.
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tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
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