EA60QC09-F datasheet, PDF - EEWORLD Datasheet

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EA60QC09-F: Description10 A, 100 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size51KB，6 Pages; ManufacturerNihon Inter Electronics Corporation; Websitehttp://www.niec.co.jp

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EA60QC09-F Overview

10 A, 100 V, SILICON, RECTIFIER DIODE

EA60QC09-F Parametric

Parameter Name	Attribute value
Maker	Nihon Inter Electronics Corporation
Parts packaging code	TO-252AA
package instruction	R-PSSO-G2
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW POWER LOSS
application	GENERAL PURPOSE
Shell connection	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.85 V
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
Maximum non-repetitive peak forward current	45 A
Number of components	2
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	1.6 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	90 V
surface mount	YES
technology	SCHOTTKY
Terminal form	GULL WING
Terminal location	SINGLE

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Type :

EA60QC09-

EA60QC09-F

60QC09

OUTLINE DRAWING

FEATURES

* TO-252AA Case, Surface Mount Device

* Dual Diodes Cathode Common

* Low Forward Voltage drop

* Low Power Loss

* High Surge Capability

* 30 Volts thru 100 Volts Types Available

* Packaged in 16mm Tape and Reel

Maximum Ratings

Rating

Repetitive Peak Reverse Voltage

P.C.Board

Average Rectified

mounted *

Output Current

RMS Forward Current

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

Symbol

RRM

F(RMS)

FSM

Tjw

Tstg

1.6

6.0

Ta=37°C

Tc=122°C

Approx Net Weight:0.30g

EA60QC09-F

50Hz Full Sine Wave

Resistive Load

Unit

°C

6.66

50Hz Full Sine Wave,1cycle,

Non-repetitive

- 40 to + 150

Electrical

•

Thermal Characteristics

Characteristics

Peak Reverse Current

Peak Forward Voltage

Junction to Ambient

Thermal

Resistance

Junction to Case

* Print Land = 20x20 mm

Symbol

Conditions

Min Typ Max

1.0

0.85

Unit

°C/W

Tj=25°C,V

RRM

per Arm

Tj=25°C,I

= 3A per Arm

Rth(j-a) P.C.Board mounted *

Rth(j-c)

EA60QC09-F Related Products

	EA60QC09-F
Description	10 A, 100 V, SILICON, RECTIFIER DIODE
Maker	Nihon Inter Electronics Corporation
Parts packaging code	TO-252AA
package instruction	R-PSSO-G2
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW POWER LOSS
application	GENERAL PURPOSE
Shell connection	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.85 V
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
Maximum non-repetitive peak forward current	45 A
Number of components	2
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	1.6 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	90 V
surface mount	YES
technology	SCHOTTKY
Terminal form	GULL WING
Terminal location	SINGLE

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