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KSB601O

Description
Low Frequency Power Amplifier
CategoryDiscrete semiconductor    The transistor   
File Size48KB,6 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

KSB601O Overview

Low Frequency Power Amplifier

KSB601O Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeSFM
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)3000
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)30 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
KSB601
KSB601
Low Frequency Power Amplifier
• Medium Speed Switching Industrial Use
• Complement to KSD560
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Value
- 100
- 100
-7
-5
-8
- 0.5
1.5
30
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
* PW≤10ms, Duty Cycle≤50%
©2000 Fairchild Semiconductor International
Rev. A, February 2000

KSB601O Related Products

KSB601O KSB601R KSB601Y KSB601
Description Low Frequency Power Amplifier Low Frequency Power Amplifier Low Frequency Power Amplifier Low Frequency Power Amplifier
Is it Rohs certified? incompatible incompatible conform to incompatible
Parts packaging code SFM TO-220AB TO-220AB SFM
package instruction TO-220, 3 PIN TO-220, 3 PIN TO-220, 3 PIN TO-220, 3 PIN
Contacts 3 3 3 3
Reach Compliance Code compli compli unknow compli
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 5 A 5 A 5 A 5 A
Collector-emitter maximum voltage 100 V 100 V 100 V 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 3000 500 5000 500
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0 e3 e0
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT APPLICABLE NOT SPECIFIED
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 30 W 30 W 30 W 30 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT APPLICABLE NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Maker Fairchild Fairchild Fairchild -
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