DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5507
NPN SILICON RF TRANSISTOR
FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
• Low noise and high gain with low collector current
• NF = 1.2 dB TYP., G
a
= 16 dB TYP. @ V
CE
= 2 V, I
C
= 2 mA, f = 2 GHz
• Maximum stable power gain: MSG = 22 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
• f
T
= 25 GHz technology adopted
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
2SC5507
2SC5507-T2
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
15
3.3
1.5
12
39
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Free Air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10522EJ01V0DS (1st edition)
(Previous No. P13864EJ1V0DS00)
Date Published September 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
©
NEC Compound Semiconductor Devices, Ltd. 1999, 2004
2SC5507
THERMAL RESISTANCE
Parameter
Junction to Case Resistance
Junction to Ambient Resistance
Symbol
R
th j-c
R
th j-a
Ratings
240
650
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
f
T
S
21e
NF
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 2 V, I
C
= 5 mA
−
−
50
−
−
70
100
100
100
nA
nA
−
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 2 mA, f = 2 GHz,
Z
S
= Z
opt
20
14
–
−
−
−
−
25
17
1.2
−
−
1.5
GHz
dB
dB
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output Power
3rd Order Intermodulation Distortion
Output Intercept Point
C
re
Note 2
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 5 mA
V
CE
= 2 V, I
C
= 5 mA
Note 4
0.08
22
5
15
0.12
−
−
−
pF
dB
dBm
dBm
MSG
Note 3
P
O (1 dB)
OIP
3
, f = 2 GHz
, f = 2 GHz
Note 4
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
3.
MSG =
S
21
S
12
4.
Collector current when P
O (1 dB)
is output
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
T78
50 to 100
2
Data Sheet PU10522EJ01V0DS
2SC5507
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
Thermal/DC Characteristics
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE
250
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
15
Total Power Dissipation P
tot
(mW)
Collector Current I
C
(mA)
200
P
tot
-T
A
: Free air
P
tot
-T
A
: Mounted on ceramic board
(15 mm
×
15 mm, t = 0.6 mm)
P
tot
-T
C
: When case temperature
is specified
150
10
100
5
50
0
25
50
75
100
125
150
Ambient Temperature T
A
(˚C), Case Temperature T
C
(˚C)
0
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
1.2
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
200
100
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 2 V
Collector Current I
C
(mA)
20
15
160
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
60
µ
A
40
µ
A
I
B
= 20
µ
A
DC Current Gain h
FE
5
10
10
5
0
1
2
3
4
1
0.001
0.01
0.1
1
10
100
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Capacitance/f
T
Characteristics
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
0.30
30
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product f
T
(GHz)
V
CE
= 3 V
f = 2 GHz
f = 1 MHz
0.25
0.20
0.15
0.10
0.05
25
20
15
10
5
0
0
1.0
2.0
3.0
4.0
5.0
1
10
Collector Current I
C
(mA)
100
Collector to Base Voltage V
CB
(V)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10522EJ01V0DS
3
2SC5507
Gain Characteristics
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
30
25
20
15
10
5
0
0.1
1.0
Frequency f (GHz)
10.0
|S
21e
|
2
MSG
MAG
V
CE
= 2 V
I
C
= 5 mA
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
| (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
|S
21e
|
2
15
10
5
0
MSG
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
MSG
20
15
10
5
0
|S
21e
|
2
MAG
f = 2 GHz
V
CE
= 2 V
f = 1 GHz
V
CE
= 2 V
2
1
10
Collector Current I
C
(mA)
100
1
10
Collector Current I
C
(mA)
100
Output Characteristics
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
10
f = 1 GHz
V
CE
= 2 V
P
out
25
10
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
25
f = 2 GHz
V
CE
= 2 V
P
out
Output Power P
out
(dBm)
0
15
Collector Current I
C
(mA)
Output Power P
out
(dBm)
0
15
–5
I
C
–10
10
–5
I
C
10
5
–10
5
–15
–30
0
–25
–20
–15
–10
–5
Input Power P
in
(dBm)
–15
–30
0
–25
–20
–15
–10
–5
Input Power P
in
(dBm)
Remark
The graphs indicate nominal characteristics.
4
Data Sheet PU10522EJ01V0DS
Collector Current I
C
(mA)
5
20
5
20
2SC5507
Noise Characteristics
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
5
G
a
f = 1.0 GHz
V
CE
= 2 V
30
25
20
15
NF
10
5
0
6
5
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
30
f = 1.5 GHz
V
CE
= 2 V
25
20
15
NF
10
5
0
Associated Gain G
a
(dB)
4
3
2
1
0
4
3
2
1
0
G
a
1
10
Collector Current I
C
(mA)
100
1
10
Collector Current I
C
(mA)
100
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
5
f = 2.0 GHz
V
CE
= 2 V
30
25
20
15
10
NF
5
0
6
5
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
30
f = 2.5 GHz
V
CE
= 2 V
25
20
15
NF
10
5
0
Associated Gain G
a
(dB)
4
3
2
1
0
G
a
4
3
2
1
0
G
a
1
10
Collector Current I
C
(mA)
100
1
10
Collector Current I
C
(mA)
100
Remark
The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→
[Device Parameters]
URL http://www.ncsd.necel.com/
Data Sheet PU10522EJ01V0DS
Associated Gain G
a
(dB)
Noise Figure NF (dB)
Noise Figure NF (dB)
Associated Gain G
a
(dB)
Noise Figure NF (dB)
Noise Figure NF (dB)
5
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