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2N6250

Description
10 A, 275 V, NPN, Si, POWER TRANSISTOR, TO-204AA
CategoryDiscrete semiconductor    The transistor   
File Size177KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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2N6250 Overview

10 A, 275 V, NPN, Si, POWER TRANSISTOR, TO-204AA

2N6250 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeTO-3
package instructionTO-3, 2 PIN
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage275 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/510
DEVICES
LEVELS
2N6249
2N6249T1
2N6250
2N6250T1
2N6251
2N6251T1
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ T
A
= +25°C
(1)
@ T
C
= +25°C
(2)
Operating & Storage Junction Temperature
Thermal Resistance, Junction-to-Case
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
T
T
op
, T
stg
R
θJC
2N6249 2N6250 2N6251
Unit
2N6249T1 2N6250T1 2N6251T1
200
300
275
375
6.0
10
5.0
6.0
175
-65 to +200
1.0
W
°C
°C/W
350
450
Vdc
Vdc
Vdc
Adc
TO-3 (TO-204AA)
NOTES:
(1) Derate linearly at 34.2 mW/°C for T
A
> +25°C
(2) Derate linearly at 1.0 mW/°C for T
C
> +25°C
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 20mAdc; L = 42mH; f = 30 – 60Hz
(See Figure 10 of MIL-PRF-19500/510)
2N6249, T1
2N6250, T1
2N6251, T1
200
275
350
225
300
375
100
Symbol
Min.
Max.
Unit
TO-254
V
(BR)CEO
Vdc
Collector-Emitter Breakdown Voltage
I
C
= 200mAdc; L = 14mH; f = 30 – 60Hz; 2N6249, T1
R
BE
= 50Ω
2N6250, T1
(See Figure 10 of MIL-PRF-19500/510)
2N6251, T1
Emitter-Base Cutoff Current
V
EB
= 6.0Vdc
V
(BR)CER
Vdc
I
EBO
µAdc
T4-LDS-0197 Rev. 1 (110296)
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