DSEP2x61-06A
HiPerFRED
V
RRM
I
FAV
t
rr
=
=
2x
=
600 V
60 A
35 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Parallel legs
Part number
DSEP2x61-06A
Backside: isolated
2
3
1
4
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
SOT-227B (minibloc)
●
Isolation Voltage: 3000 V~
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
●
Base plate: Copper
internally DCB isolated
●
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160920b
© 2016 IXYS all rights reserved
DSEP2x61-06A
Fast Diode
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 150 °C
d = 0.5
T
VJ
= 150 °C
1.09
4.3
0.10
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
= 400 V f = 1 MHz
I
F
=
60 A; V
R
= 300 V
T
VJ
= 45°C
T
VJ
= 25°C
T
VJ
= 25 °C
T
VJ
= 100 °C
T
VJ
= 25 °C
T
VJ
= 100 °C
-di
F
/dt = 200 A/µs
67
8
13
35
110
140
600
V
mΩ
K/W
W
A
pF
A
A
ns
ns
min.
typ.
max. Unit
600
V
600
650
2.5
2.01
2.27
1.35
1.63
60
V
µA
mA
V
V
V
V
A
max. non-repetitive reverse blocking voltage
V
R
= 600 V
V
R
= 600 V
I
F
=
I
F
=
60 A
60 A
forward voltage drop
I
F
= 120 A
I
F
= 120 A
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
I
RM
t
rr
average forward current
T
C
= 70 °C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
0.85 K/W
reverse recovery time
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160920b
© 2016 IXYS all rights reserved
DSEP2x61-06A
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
SOT-227B (minibloc)
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
100
150
125
150
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
30
1.1
1.1
10.5
8.6
3.2
6.8
3000
2500
1.5
1.5
Product Marking
Part No.
Logo
XXXXX
®
Zyyww
abcd
Assembly Line
DateCode
Assembly Code
Ordering
Standard
Ordering Number
DSEP2x61-06A
Marking on Product
DSEP2x61-06A
Delivery Mode
Tube
Quantity
10
Code No.
474754
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Fast
Diode
* on die level
T
VJ
= 150 °C
V
0 max
R
0 max
1.09
2.4
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160920b
© 2016 IXYS all rights reserved
DSEP2x61-06A
Outlines SOT-227B (minibloc)
2
3
1
4
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160920b
© 2016 IXYS all rights reserved
DSEP2x61-06A
Fast Diode
160
140
120
100
T
VJ
= 150°C
100°C
25°C
4000
T
VJ
= 100°C
V
R
= 300 V
3000
80
T
VJ
= 100°C
V
R
= 300 V
60
I
F
Q
r
2000
80
[A]
60
40
20
0
0
1
2
[nC]
1000
I
F
= 120 A
60 A
30 A
I
RM
40
[A]
20
I
F
= 120 A
60 A
30 A
0
100
0
1000
0
200
400
600
800
1000
V
F
[V]
Fig. 1 Forward current I
F
vs. V
F
-di
F
/dt [A/µs]
Fig. 2 Reverse recovery charge
Q
r
versus -di
F
/dt
140
130
T
VJ
= 100°C
V
R
= 150 V
15
120
20
-di
F
/dt [A/µs]
Fig. 3 Peak reverse current
I
RM
versus -di
F
/dt
1.6
T
VJ
= 100°C
I
F
= 60 A
1.2
2.0
1.5
K
f
1.0
I
RM
0.5
Q
r
t
rr
110
I
F
= 120 A
60 A
30 A
V
FR
10
t
fr
0.8
[ns]
100
[V]
5
[µs]
90
80
0
0
200
400
600
800
1000
0
V
FR
t
fr
0.4
0.0
0
40
80
120
160
200
400
600
800
0.0
1000
T
VJ
[°C]
Fig. 4 Dynamic parameters
Q
r
, I
RM
versus T
VJ
1
-di
F
/dt [A/µs]
Fig. 5 Recovery time
t
rr
versus -di
F
/dt
-di
F
/dt [A/µs]
Fig. 6 Peak forward voltage
V
FR
and tfr versus di
F
/dt
0.1
Z
thJC
0.01
Constants for Z
thJC
calculation:
i
1
2
3
4
DSEP 2x61-06A
R
thi
(K/W)
0.3073
0.3533
0.0887
0.1008
t
i
(s)
0.0055
0.0092
0.0007
0.0399
[K/W]
0.001
0.0001
0.00001
0.0001
0.001
t [s]
0.01
0.1
1
Fig. 7 Transient thermal resistance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160920b
© 2016 IXYS all rights reserved
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