2STC5242 datasheet, PDF - EEWORLD Datasheet

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2STC5242: DescriptionBipolar Transistors - BJT High PWR NPN 230V 30 MHz 2STA1962; CategoryDiscrete semiconductor The transistor; File Size169KB，9 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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2STC5242 Overview

Bipolar Transistors - BJT High PWR NPN 230V 30 MHz 2STA1962

2STC5242 Parametric

Parameter Name	Attribute value
Brand Name	STMicroelectronics
Is it Rohs certified?	conform to
Parts packaging code	TO-3P
package instruction	ROHS COMPLIANT, TO-3P, 3 PIN
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	15 A
Collector-emitter maximum voltage	230 V
Configuration	SINGLE
Minimum DC current gain (hFE)	35
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	130 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
Base Number Matches	1

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2STC5242

High power NPN epitaxial planar bipolar transistor

Features

■

High breakdown voltage V

CEO

= 230 V

Complementary to 2STA1962

Fast-switching speed

Typical f

= 30 MHz

Application

■

Audio power amplifier

TO-3P

Description

This device is a NPN transistor manufactured

using new BiT-LA (Bipolar Transistor for linear

amplifier) technology. The resulting transistor

shows good gain linearity behaviour.

Figure 1.

Internal schematic diagram

Table 1.

Device summary

Order code

2STC5242

Marking

2STC5242

Package

TO-3P

Packaging

Tube

July 2008

Rev 3

1/9

www.st.com

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