EEWORLDEEWORLDEEWORLD

Part Number

Search

BAS581-02V-V-G-08

Description
Schottky Diodes & Rectifiers
CategoryDiscrete semiconductor    diode   
File Size73KB,3 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

BAS581-02V-V-G-08 Online Shopping

Suppliers Part Number Price MOQ In stock  
BAS581-02V-V-G-08 - - View Buy Now

BAS581-02V-V-G-08 Overview

Schottky Diodes & Rectifiers

BAS581-02V-V-G-08 Parametric

Parameter NameAttribute value
MakerVishay
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.37 V
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current0.2 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.03 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
BAS581-02V-V-G
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
• This diode features very low turn-on voltage and
fast switching
• Space saving SOD-523 package
22321
1
2
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
SOD-523
Weight:
approx. 1.4 mg
Molding compound flammability rating:
UL 94 V-0
Terminals:
high temperature soldering guaranteed:
260 °C/10 S at terminals
Packaging codes/options:
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAS581-02V-V-G
ORDERING CODE
BAS581-02V-V-G-08
CIRCUIT CONFIGURATION
Single
TYPE MARKING
REMARKS
Tape and reel
.
Z
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reserve voltage
= working peak reserve voltage
Forward continuous current
Surge forward current
TEST CONDITION
SYMBOL
V
RRM
I
F
I
FSM
VALUE
40
30
200
UNIT
V
mA
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
SYMBOL
R
thJA
T
j
T
stg
VALUE
680
125
-65 to +150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reserve breakdown voltage
Leakage current
Forward voltage
Diode capacitance
TEST CONDITION
I
R
= 100 μA
V
R
= 30 V
I
F
= 1 mA
V
R
= 1 V, f = 1 MHz
SYMBOL
V
(BR)
I
R
V
F
C
D
MIN.
40
0.5
370
2
TYP.
MAX.
UNIT
V
μA
mV
pF
Rev. 1.2, 01-Jun-17
Document Number: 82392
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2537  2134  561  107  2875  52  43  12  3  58 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号