BLF7G27L-75P;
BLF7G27LS-75P
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from
2300 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
IS-95
[1]
f
(MHz)
2300 to 2400
I
Dq
(mA)
650
V
DS
(V)
28
P
L(AV)
(W)
12
G
p
(dB)
17
D
(%)
26
ACPR
885k
(dBc)
46
[1]
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (2300 MHz to 2700 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2300 MHz to 2700 MHz frequency range
BLF7G27L-75P; BLF7G27LS-75P
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF7G27L-75P (SOT1121A)
1
2
1
3
5
3
4
2
sym117
5
4
BLF7G27LS-75P (SOT1121B)
1
2
3
4
5
drain1
1
2
5
drain2
gate1
gate2
source
[1]
3
4
1
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF7G27L-75P
BLF7G27LS-75P
-
-
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
earless flanged LDMOST ceramic package; 4 leads
Version
SOT1121A
SOT1121B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
18
+150
225
Unit
V
V
A
C
C
BLF7G27L-75P_BLF7G27LS-75P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 13
BLF7G27L-75P; BLF7G27LS-75P
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 10 W
Typ
0.5
Unit
K/W
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 50 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 2.5 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 3.5 A
Min Typ
65
1.3
-
-
-
-
-
-
1.8
-
9.5
-
3.8
0.29
Max Unit
-
2.3
5
-
500
-
-
V
V
A
A
nA
S
7. Test information
Table 7.
Functional test information
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f
1
= 2300 MHz; f
2
= 2400 MHz; RF performance at V
DS
= 28 V; I
Dq
= 650 mA;
T
case
= 25
C; 2 sections combined unless otherwise specified; in a class-AB production test circuit.
Symbol
P
L(AV)
G
p
RL
in
D
ACPR
885k
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
P
L(AV)
= 12 W
P
L(AV)
= 12 W
P
L(AV)
= 12 W
P
L(AV)
= 12 W
Conditions
Min Typ Max Unit
-
-
23
-
12
-
-
-
W
dB
dB
%
dBc
15.8 17
26
12 8
46 42
7.1 Ruggedness in class-AB operation
The BLF7G27L-75P and BLF7G27LS-75P are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 650 mA; P
L
= 75 W (CW); f = 2300 MHz.
BLF7G27L-75P_BLF7G27LS-75P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 13
BLF7G27L-75P; BLF7G27LS-75P
Power LDMOS transistor
7.2 One-tone CW
19
G
p
(dB)
18
17
16
η
D
15
14
13
12
0
20
40
60
80
30
20
10
0
100
P
L
(W)
15
14
13
12
0
20
40
60
80
001aam248
70
G
p
η
D
(%)
60
50
40
19
G
p
(dB)
18
17
16
η
D
001aam249
70
G
p
η
D
(%)
60
50
40
30
20
10
0
100
P
L
(W)
V
DS
= 28 V; I
Dq
= 650 mA; f = 2300 MHz.
V
DS
= 28 V; I
Dq
= 650 mA; f = 2400 MHz.
Fig 1.
One-tone CW power gain and drain efficiency
as function of load power; typical values
Fig 2.
One-tone CW power gain and drain efficiency
as function of load power; typical values
7.3 Single carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
18
G
p
(dB)
17
G
p
001aam250
60
η
D
(%)
40
18
G
p
(dB)
17
001aam251
60
η
D
(%)
40
G
p
η
D
16
20
16
η
D
20
15
0
10
20
30
40
P
L
(W)
50
0
15
0
10
20
30
40
P
L
(W)
50
0
V
DS
= 28 V; I
Dq
= 650 mA; f = 2300 MHz.
V
DS
= 28 V; I
Dq
= 650 mA; f = 2400 MHz.
Fig 3.
Single carrier IS-95 power gain and drain
efficiency as function of load power;
typical values
Fig 4.
Single carrier IS-95 power gain and drain
efficiency as function of load power;
typical values
BLF7G27L-75P_BLF7G27LS-75P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 13
BLF7G27L-75P; BLF7G27LS-75P
Power LDMOS transistor
−30
ACPR
(dBc)
−50
001aam252
−30
ACPR
(dBc)
−50
001aam253
ACPR
885k
ACPR
885k
ACPR
1980k
ACPR
1980k
−70
−70
−90
0
10
20
30
40
P
L
(W)
50
−90
0
10
20
30
40
P
L
(W)
50
V
DS
= 28 V; I
Dq
= 650 mA; f = 2300 MHz.
V
DS
= 28 V; I
Dq
= 650 mA; f = 2400 MHz.
Fig 5.
Single carrier IS-95 ACPR at 885 kHz and at
1980 kHz as function of load power;
typical values
Fig 6.
Single carrier IS-95 ACPR at 885 kHz and at
1980 kHz as function of load power;
typical values
10
PAR
001aam254
10
PAR
001aam255
8
8
6
6
4
4
2
0
10
20
30
40
P
L
(W)
50
2
0
10
20
30
40
P
L
(W)
50
V
DS
= 28 V; I
Dq
= 650 mA; f = 2300 MHz.
V
DS
= 28 V; I
Dq
= 650 mA; f = 2400 MHz.
Fig 7.
Single carrier IS-95 peak-to-average power
ratio as a function of load power;
typical values
Fig 8.
Single carrier IS-95 peak-to-average power
ratio as a function of load power;
typical values
BLF7G27L-75P_BLF7G27LS-75P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
5 of 13
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