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◇STRUCTURE
◇PRODUCT
◇PART
NUMBER
◇PHYSICAL
DIMENSION
◇BLOCK
DIAGRAM
◇USE
◇FEATURES
Silicon Monolithic Integrated Circuit
4K×8 bit Electrically Erasable PROM
BU9890GUL-W
Fig.-1（VCSP50L1）
Fig.-2
General purpose
・4K words × 8 bits architecture serial EEPROM
・Wide operating voltage range (1.7V½3.6V)
・Two wire serial interface
・Self-timed write cycle with automatic erase
・32 byte Page Write mode
・Low power consumption。
Write
（3.3V） ： 0.6mA (Typ.)
Read
（3.6V） ： 0.6mA (Typ.)
Standby （3.6V） ： 0.1μA (Typ.)
・DATA security
Write protect feature (WP pin)
Inhibit to WRITE at low V
CC
・WLCSP 6pin package
・High reliability fine pattern CMOS technology
・Endurance : 100,000 erase/write cycles
・Data retention : 40 years
・Filtered inputs in SCL・SDA for noise suppression
・Initial data FFh in all address
・Pull-up resistor inputs in SCL・SDA
◇ABSOLUTE
MAXIMUM RATING (Ta=25℃
Parameter
Supply Voltage
Power Dissipation
Storage Temperature
Operating Temperature
Terminal Voltage
Symbol
V
CC
Ｐ½
Tstg
Topr
－
Rating
-0.3½6.5
220 *1
-65½125
-40½85
-0.3½Vcc+1.0 *2
Unit
V
mW
℃
℃
V
*1 Degradation is done at 2.2mW/℃（*1） for operation above 25℃
*2 Maximum value of Terminal Voltage is below 6.5V.
◇RECOMMENDED OPERATING CONDITION
Parameter
Write
Supply Voltage
Read
Input Voltage
V
IN
Vcc
1.7½3.6
0½Vcc
REV. A
Symbol
Rating
2.7½3.3
Unit
V
V
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◇DC OPERATING CHARACTERISTICS (Unless otherwise specified Ta=-40½85℃½V
CC
=1.7½3.6V)
Parameter
“H”
Input Voltage1
“L”
Input Voltage1
“H”
Input Voltage2
“L”
Input Voltage2
“H”
Input Voltage3
“L”
Input Voltage3
“L”
Output Voltage1
“L”
Output Voltage2
Input Leakage Current
Pull-up resistor
Output Leakage Current
Symb
ol
V
IH1
V
IL1
V
IH2
V
IL2
V
IH3
V
IL3
V
OL1
V
OL2
I
LI
I
LI2
I
LO
Specification
Unit
Min.
0.7V
CC
-0.3
0.8V
CC
-0.3
0.9Vcc
-0.3
－
－
-1
6
-1
Typ.
－
－
－
－
－
－
－
－
－
10
－
Max.
Vcc+1.0 V 2.5V≦Vcc≦3.6V
0.3V
CC
V 2.5V≦Vcc≦3.6V
test condition
Vcc+1.0 V 1.8V≦Vcc＜2.5V
0.2V
CC
V 1.8V≦Vcc＜2.5V
Vcc+1.0 V 1.7V≦Vcc＜1.8V
0.1Vcc
0.4
0.2
1
14
1
V 1.7V≦Vcc＜1.8V
V I
OL
=3.0mA，2.5V≦Vcc≦3.6V（SDA）
V I
OL
=0.7mA，1.7V≦Vcc＜2.5V（SDA）
μA V
IN
=0V½V
CC
, (WP, TEST)
kΩ (SCL, SDA)
μA V
OUT
=0V½V
CC
（SDA）
V
CC
=3.3V,f
SCL
=400½Hz，
t
WR
=5ms
I
CC1
Operating Current
I
CC2
－
－
4.１
mA Byte Write
Page Write
V
CC
=3.6V,f
SCL
=400½Hz
mA Random Read
Current Read
Sequential Read
μA
V
CC
=3.6V,SDA,SCL=V
CC
－
－
1.7
WP=GND
○ This product is not designed for protection against radioactive rays.
◇MEMORY CELL CHARACTERISTICS(Ta=25℃、Vcc=1.7½3.6V）
Specification
Parameter
Min.
Typ.
Write/Erase Cycle
Data Retention
*1
*1
100,000
40
－
－
Standby Current
I
SB
－
－
2.0
Max.
－
－
Unit
cycle
year
*1:Not 100％ TESTED
REV. A
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◇PIN CONFIGURATION
B
A
○ ○ ○
○ ○ ○
B1
B2
B3
TEST
A1
GND
A2
VDD
A3
SDA
SCL
WP
1
2
3
◇PIN NAME
Land No.
B3
B2
B1
A3
A2
A1
PIN NAME
Vcc
GND
TEST
WP
SCL
SDA
I/O
-
-
IN
IN
IN
IN/OUT
Power Supply
Ground （0V）
FUNCTIONS
TEST Pin Connect with GND
Write Protect Input
Serial Clock Input
Slave and Word Address,
Serial Data Input, Serial Data Output
REV. A
京公网安备 11010802033920号
EEWORLD
