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SI7904DN-T1-E3

Description
MOSFET 20V N-CH
CategoryDiscrete semiconductor    The transistor   
File Size111KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SI7904DN-T1-E3 Overview

MOSFET 20V N-CH

SI7904DN-T1-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionROHS COMPLIANT, 1212-8, POWERPAK-8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)11 mJ
Shell connectionDRAIN
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)5.3 A
Maximum drain current (ID)5.3 A
Maximum drain-source on-resistance0.03 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-XDSO-C6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.8 W
Maximum pulsed drain current (IDM)20 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Si7904DN
New Product
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(Ω)
0.030 at V
GS
= 4.5 V
20
0.036 at V
GS
= 2.5 V
0.045 at V
GS
= 1.8 V
I
D
(A)
7.7
7.0
6.3
FEATURES
• TrenchFET
®
Power MOSFETS: 1.8-V Rated
• New Low Thermal Resistance PowerPAK
®
Package with Low 1.07-mm Profile
Pb-free
Available
RoHS*
COMPLIANT
APPLICATIONS
• HDD Spindle Drive
PowerPAK 1212-8
D1
3.30 mm
S1
D2
1
2
3.30 mm
G1
S2
3
4
D1
G2
G1
G2
8
7
D1
D2
6
5
D2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
Bottom View
Ordering Information:
Si7904DN-T1
Si7904DN–T1–E3 (Lead (Pb)–free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
Soldering Recommendations
b,c
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
10 secs
20
±8
7.7
5.5
20
2.3
15
11
2.8
1.5
- 55 to 150
260
1.3
0.85
1.1
mJ
W
°C
5.3
3.8
A
Steady State
Unit
V
L = 0.1 mH
T
A
= 25 °C
T
A
= 85 °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
t
10 sec
Steady State
Steady State
Symbol
R
thJA
Typical
35
75
4
Maximum
44
94
5
Unit
°C/W
Maximum Junction-to-Case
R
thJC
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. See Solder Profile (
http://www.vishay.com/ppg?73257
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 71643
S-61086–Rev. F, 19-Jun-06
www.vishay.com
1

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