BTA2008W-800D
3Q Hi-Com Triac
15 June 2016
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT223 surface mountable plastic
package. This "series D" triac balances the requirements of commutation performance and
gate sensitivity and is intended for interfacing with low power drivers and logic ICs including
microcontrollers.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct gate triggering from low power drivers and logic ICs
High commutation capability with very sensitive gate
High voltage capability
Planar passivated for voltage ruggedness and reliability
Surface mountable package
Triggering in three quadrants only
Very sensitive gate for easy logic level triggering
3. Applications
•
•
•
Low power motor controls
Small inductive loads e.g. solenoids, door locks, water valves
Small loads in large white goods
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
sp
≤ 111 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 9
0.25
Typ
-
-
-
-
-
-
Max
800
0.8
9
9.9
125
5
Unit
V
A
A
A
°C
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BTA2008W-800D
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 9
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 9
Min
0.25
0.25
-
-
200
Typ
-
-
-
1.35
-
Max
5
5
10
1.6
-
Unit
mA
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating current
V
D
= 12 V; T
j
= 25 °C;
Fig. 11
I
T
= 0.85 A; T
j
= 25 °C;
Fig. 12
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 125 °C;
I
T(RMS)
= 0.8 A; dV
com
/dt = 10 V/µs;
gate open circuit
Dynamic characteristics
dI
com
/dt
0.5
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
4
Symbol Description
T1
T2
G
mb
main terminal 1
main terminal 2
gate
mounting base; connected to
main terminal 2
1
2
3
Simplified outline
4
Graphic symbol
T2
sym051
T1
G
SC-73 (SOT223)
6. Ordering information
Table 3. Ordering information
Type number
BTA2008W-800D
Package
Name
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
BTA2008W-800D
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
15 June 2016
2 / 16
WeEn Semiconductors
BTA2008W-800D
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
6
I
T(RMS)
(A)
4
0.6
003aag395
Conditions
Min
-
Max
800
0.8
9
9.9
0.41
100
2
5
0.1
150
125
003aag396
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
sp
≤ 111 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 20 mA
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20ms period
-
-40
-
1
I
T(RMS)
(A)
0.8
111°C
0.4
2
0.2
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
T
sp
(°C)
150
f = 50 Hz; T
sp
= 111 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
Fig. 2. RMS on-state current as a function of lead
temperature; maximum values
BTA2008W-800D
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
15 June 2016
3 / 16
WeEn Semiconductors
BTA2008W-800D
3Q Hi-Com Triac
P
tot
(W)
1.0
003aac118
0.8
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90°
60°
30°
0.6
0.4
0.2
0.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
I
T(RMS)
(A)
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
12
I
TSM
(A)
8
003aag393
4
I
T
I
TSM
t
1/f
0
T
j(init)
= 25 °C max
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA2008W-800D
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
15 June 2016
4 / 16
WeEn Semiconductors
BTA2008W-800D
3Q Hi-Com Triac
10
3
003aag394
I
T
I
TSM
(A)
10
2
(1)
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
1
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms; (1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA2008W-800D
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
15 June 2016
5 / 16
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