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APTGT35A120T1G

Description
IGBT Modules Trench Field Stop 1200V 55A 208W
CategoryDiscrete semiconductor    The transistor   
File Size463KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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APTGT35A120T1G Overview

IGBT Modules Trench Field Stop 1200V 55A 208W

APTGT35A120T1G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
package instructionFLANGE MOUNT, R-XUFM-T12
Contacts12
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)55 A
Collector-emitter maximum voltage1200 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 codeR-XUFM-T12
JESD-609 codee1
Humidity sensitivity level1
Number of components2
Number of terminals12
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)610 ns
Nominal on time (ton)140 ns
APTGT35A120T1G
Phase leg
Fast Trench + Field Stop IGBT3
Power Module
5
Q1
7
8
Q2
9
10
1
2
12
CR2
3
4
NTC
6
11
V
CES
= 1200V
I
C
= 35A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Fast Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
CR1
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
Max ratings
1200
55
35
70
±20
208
70A@1150V
Unit
V
A
V
W
October, 2012
1–6
APTGT35A120T1G – Rev 1
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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