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Datasheet> All Categories > Discrete semiconductor> The transistor> 2N2609
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2N2609

Description
JFET JFET P-Channel -30V 50mA 300mW 2mW
CategoryDiscrete semiconductor    The transistor   
File Size418KB，1 Pages
ManufacturerInterFET
Websitehttp://www.interfet.com/
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2N2609 Overview

JFET JFET P-Channel -30V 50mA 300mW 2mW

2N2609 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeBCY
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codeunknown
FET technologyJUNCTION
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1

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Download Datasheet
8/2014
2N2608, 2N2609
P-Channel Silicon Junction Field-Effect Transistor
∙
∙
∙
Low-Level Choppers
Data Switches
Commutators
2N2608
Min Max
-30
10
1
-0.9
4
-4.5
Absolute maximum ratings at T
A
= 25
o
C
Reverse Gate Source & Gate Drain Voltage
-30V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation
300 mW
Power Derating
2 mW/
o
C
Storage Temperature Range
-65
o
C to +150
o
C
2N2609
Min
Max
-30
30
1
-2
4
-10
At 25
o
C free air temperature
Static Electrical Characteristics
Gate Source Breakdown
V
(BR)GSS
Voltage
Gate Reverse Current
I
GSS
Gate Source Cutoff Voltage
Drain Saturation Current
(pulsed)
V
GS(OFF)
I
DSS
Process PJ32
Unit
V
nA
V
mA
Test Conditions
I
G
= -1 uA, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0 V
V
DS
= -10 V, V
GS
= 0 V
V
DS
= -10 V, V
GS
= 0 V
Dynamic Electrical Characteristics
Common-Source Forward
g
fs
Transconductance
Common-Source Input
Capacitance
Common-Source Reverse
Transfer Capacitance
Typical
Equivalent Short Circuit Input
Noise Voltage
C
iss
C
rss
1
17
5
25
30
7
mS
pF
pF
V
DS
= -10 V, V
GS
= 0 V
V
DS
= -10 V, V
GS
= 1 V
V
DS
= 10 V, I
D
= 5 mA
f=1
kHz
f=1
MHz
f=1
MHz
f=1
kHz
~e
N
10
10
nV/√Hz
V
DS
= 10 V, I
D
= 5 mA
SMP2608, SMP2609
715 N. Glenville Dr., Ste. 400
Richardson, TX 75089
(972) 238-9700 Fax (972) 238-5338
www.interfet.com

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