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BD246C-S

Description
Bipolar Transistors - BJT 100V 10A PNP
CategoryDiscrete semiconductor    The transistor   
File Size58KB,4 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
Environmental Compliance
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BD246C-S Overview

Bipolar Transistors - BJT 100V 10A PNP

BD246C-S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerBourns
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)4
JESD-30 codeR-PSFM-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD245 Series
80 W at 25°C Case Temperature
10 A Continuous Collector Current
15 A Peak Collector Current
Customer-Specified Selections Available
C
B
SOT-93 PACKAGE
(TOP VIEW)
1
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD246
Collector-emitter voltage (R
BE
= 100
Ω)
BD246A
BD246B
BD246C
BD246
Collector-emitter voltage (I
C
= -30 mA)
BD246A
BD246B
BD246C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
2
T
j
T
stg
T
L
V
CEO
V
CER
SYMBOL
VALUE
-55
-70
-90
-115
-45
-60
-80
-100
-5
-10
-15
-3
80
3
62.5
-65 to +150
-65 to +150
250
V
A
A
A
W
W
mJ
°C
°C
°C
V
V
UNIT
This value applies for t
p
0.3 ms, duty cycle
10%.
Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= -20 V.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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