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BAW27-TAP

Description
Diodes - General Purpose, Power, Switching 75 Volt 200mA 4.0 Amp IFSM
Categorysemiconductor    Discrete semiconductor   
File Size75KB,3 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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Diodes - General Purpose, Power, Switching 75 Volt 200mA 4.0 Amp IFSM

BAW27-TAP Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerVishay
Product CategoryDiodes - General Purpose, Power, Switching
RoHSDetails
ProductGeneral Purpose Diodes
Mounting StyleThrough Hole
Package / CaseDO-35-2
Peak Reverse Voltage75 V
Max Surge Current0.5 A
If - Forward Current0.3 A
ConfigurationSingle
Recovery Time6 ns
Vf - Forward Voltage1.25 V
Ir - Reverse Current0.1 uA
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 175 C
PackagingAmmo Pack
Height1.7 mm
Length3.9 mm
TypeSwitching Diode
Width1.7 mm
Factory Pack Quantity10000
Unit Weight0.004586 oz
BAW27
www.vishay.com
Vishay Semiconductors
Small Signal Switching Diode
FEATURES
• Silicon epitaxial planar diode
• Low forward voltage drop
• High forward current capability
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
• High speed switch and general purpose use in computer
and industrial applications
MECHANICAL DATA
Case:
DO-35 (DO-204AH)
Weight:
approx. 125 mg
Cathode band color:
black
Packaging codes / options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE
PART
BAW27
ORDERING CODE
BAW27-TR or BAW27-TAP
TYPE MARKING
BAW27
CIRCUIT CONFIGURATION
Single
REMARKS
Tape and reel / ammopack
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Forward continuous current
Average forward current
Power dissipation
V
R
= 0
l = 4 mm, T
L
= 45 °C
l = 4 mm, T
L
25 °C
t
p
= 1 μs
TEST CONDITION
SYMBOL
V
RRM
V
R
I
FSM
I
F
I
F(AV)
P
tot
P
tot
VALUE
75
60
4
600
300
440
500
UNIT
V
V
A
mA
mA
mW
mW
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
l = 4 mm, T
L
= constant
SYMBOL
R
thJA
T
j
T
stg
VALUE
350
175
-65 to +175
UNIT
K/W
°C
°C
Rev. 1.8, 13-Jul-17
Document Number: 85548
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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