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IRG4BC30F-SPBF

Description
IGBT Modules IGBT DISCRETES
Categorysemiconductor    Discrete semiconductor   
File Size305KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRG4BC30F-SPBF Overview

IGBT Modules IGBT DISCRETES

IRG4BC30F-SPBF Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryIGBT Modules
RoHSDetails
ConfigurationSingle
Collector- Emitter Voltage VCEO Max600 V
Continuous Collector Current at 25 C31 A
Package / CaseD-PAK-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
Height4.69 mm (Max)
Length10.54 mm (Max)
Width8.81 mm (Max)
Mounting StyleSMD/SMT
Maximum Gate Emitter Voltage+/- 20 V
Factory Pack Quantity1000
Unit Weight0.009185 oz
PD -95651A
IRG4BC30FPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
• Lead-Free
C
Fast Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.59V
@V
GE
= 15V, I
C
= 17A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current

Clamped Inductive Load Current
‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
600
31
17
124
124
± 20
10
100
42
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.5
–––
2.0 (0.07)
Max.
1.2
–––
80
–––
Units
°C/W
g (oz)
www.irf.com
1
01/26/10

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