Doc No.
TT4-EA-12667
Revision.
3
Product Standards
MOS FET
FC6546010R
FC6546010R
Dual N-channel MOS FET
Unit : mm
For switching
Features
Low drive voltage: 2.5 V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
6
2.0
0.2
5
4
0.13
2
3
1.25
2.1
0.7
(0.65)
(0.65)
1.3
Marking Symbol V6
Basic Part Number : Dual FK350601 (Individual)
Packaging
Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
1.
Source(FET1)
4.
Source(FET2)
2. Gate(FET1) 5. Gate(FET2)
3. Drain(FET2) 6. Drain(FET1)
Panasonic
JEITA
Code
SMini6-F3-B
SC-113DB
SOT-363
Absolute Maximum Ratings Ta = 25C
Parameter
Symbol
Drain-source breakdown voltage
FET1 Gate-source breakdown voltage
FET2 Drain current
Pulse drain current
Total power dissipation
Channel temperature
Overall
Operating ambient temperature
Storage temperature
VDSS
VGSS
ID
IDp
PT
Tch
Topr
Tstg
Rating
60
12
100
200
150
150
-40 to + 85
-55 to +150
Unit
V
V
mA
mA
mW
C
C
C
Internal Connection
(D1)
6
(G2)
5
(S2)
4
FET1
FET2
1
(S1)
2
(G1)
3
(D2)
Pin Name
1.
Source(FET1)
4.
Source(FET2)
2. Gate(FET1) 5. Gate(FET2)
3. Drain(FET2) 6. Drain(FET1)
Page 1 of 6
Established : 2010-07-02
Revised
: 2013-08-26
Doc No.
TT4-EA-12667
Revision.
3
Product Standards
MOS FET
FC6546010R
Electrical Characteristics Ta = 25C
3C
FET1,FET2
Parameter
Symbol
Drain-source breakdown voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note)
*1
Conditions
Min
60
Typ
Max
1.0
10
1.5
15
12
Unit
V
A
A
V
mS
pF
pF
pF
ns
ns
*1
ID = 1 mA, VGS = 0
VDS = 60 V, VGS = 0
VGS =
10
V, VDS = 0
ID = 1.0
A,
VDS = 3.0 V
RDS(on)1
ID = 10 mA, VGS = 2.5 V
RDS(on)2
ID = 10 mA, VGS = 4.0 V
|Yfs|
ID = 10 mA, VDS = 3.0 V
Ciss
VDS = 3 V, VGS = 0, f = 1 MHz
Coss
Crss
VDD = 3 V, VGS = 0 to 3 V
ton
ID = 10 mA
VDD = 3 V, VGS = 3 to 0 V
toff
ID = 10 mA
VDSS
IDSS
IGSS
VTH
0.9
20
1.2
8
6
60
12
7
3
100
100
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Turn-on and Turn-off test circuit
Page 2 of 6
Established : 2010-07-02
Revised
: 2013-08-26
Doc No.
TT4-EA-12667
Revision.
3
Product Standards
MOS FET
FC6546010R
*1
Turn-on, Turn-off
measurement circuit
VDD=3V
ID=10mA
RL=300Ω
D
Vin
VGS=0½3V
Vout
G
50Ω
S
Page 3 of 6
Established : 2010-07-02
Revised
: 2013-08-26
Doc No.
TT4-EA-12667
Revision.
3
Product Standards
MOS FET
FC6546010R
Technical Data ( reference )
ID - VDS
0.10
VGS = 4.0 V
ID - VGS
0.1
Drain Current ID (A)
Drain current ID (A)
2.5 V
0.08
Ta = 85
℃
0.05
0.06
25
℃
0.04
0.02
0
0
1
2
3
4
Gate-source voltage VGS (V)
-40
℃
2.0 V
1.5 V
0.00
0
0.5
1
1.5
Drain-source Voltage VDS (V)
VDS - VGS
Drain-source Voltage VDS (V)
0.3
0.25
0.2
0.15
0.1
0.05
5.0 mA
ID = 20.0 mA
RDS(on) - ID
Drain-source On-state Resistance
RDS(on) ()
100
10
2.5 V
10.0 mA
VGS = 4.5 V
0
0
2
4
6
1
1
10
Drain Current ID (mA)
100
Gate-source Voltage VGS (V)
Capacitance - VDS
100
Gate-source Voltage VGS (V)
3
Dynamic Input/Output Characteristics
VDD = 3 V
2
Capacitance C (pF)
10
Ciss
Coss
Crss
1
1
0.1
1
10
100
Drain-source Voltage VDS (V)
0
0
1
1
2
Total Gate Charge Qg (nC)
Page 4 of 6
Established : 2010-07-02
Revised
: 2013-08-26
Doc No.
TT4-EA-12667
Revision.
3
Product Standards
MOS FET
FC6546010R
Technical Data ( reference )
Vth - Ta
2.5
Gate-source Threshold Voltage (V)
RDS(on) - Ta
12
Drain-source On-resistance
RDS(on) (Ω)
10
8
6
4
2
0
4V
VGS = 2.5 V
2
1.5
1
0.5
0
-50
0
50
Temperature (℃)
100
150
-50
0
50
Temperature (℃)
100
150
PD - Ta
0.3
Total Power Dissipation PD (W)
0.2
0.1
0
0
50
100
150
Temperature Ta (C)
Page 5 of 6
Established : 2010-07-02
Revised
: 2013-08-26
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