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DMG1012T-7

Description
MOSFET MOSFET N-CHANNEL SOT-523
CategoryDiscrete semiconductor    The transistor   
File Size419KB,6 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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DMG1012T-7 Overview

MOSFET MOSFET N-CHANNEL SOT-523

DMG1012T-7 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time14 weeks
Other featuresHIGH RELIABILITY
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)0.63 A
Maximum drain current (ID)0.63 A
Maximum drain-source on-resistance0.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.28 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DMG1012T
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.002 grams (Approximate)
SOT523
D
E DP O E T DT 2 V
S R T CE O k
ESD PROTECTION TO 2kV
Top View
Equivalent Circuit
(Note 6)
G
Top View
S
Ordering Information
(Note 5)
Part Number
DMG1012T-7
DMG1012T-13
DMG1012TQ-7
Notes:
Qualification
Commercial
Commercial
Automotive
Case
SOT523
SOT523
SOT523
Packaging
3000/Tape & Reel
10000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
6. The ESD gate protection diode is only designed to protect against ESD events. No gate-source voltage greater than the maximum V
GSS
rating
(given on page 2) can be applied.
Marking Information
NA1
YM
NA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
Feb
2
2018
F
Mar
3
2019
G
Apr
4
2020
H
May
5
Jun
6
2021
I
Jul
7
2022
J
Aug
8
2023
K
Sep
9
2024
L
Oct
O
2025
M
Nov
N
2026
N
Dec
D
May 2018
DMG1012T
Document number: DS31783 Rev. 5 - 2
1 of 6
www.diodes.com
© Diodes Incorporated
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