The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 73448
S-61086-Rev. C, 19-Jun-06
www.vishay.com
1
Symbol
R
thJA
R
thJC
Typical
20
2.1
Maximum
25
2.6
Unit
Si7634DP
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 13 A, di/dt = 100 A/µs, T
J
= 25 °C
I
S
= 2.7 A
0.72
37
30
18
19
T
C
= 25 °C
40
60
1.1
55
45
V
ns
nC
ns
A
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 17 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 17 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
2890
620
280
52
21
8.2
7.2
1.5
15
220
45
90
15
71
67
83
2.3
23
330
70
135
23
110
100
125
ns
Ω
78
32
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 17 A
V
GS
= 4.5 V, I
D
= 14 A
V
DS
= 15 V, I
D
= 17 A
30
0.0043
0.0062
35
0.0052
0.0076
1.5
30
25
5.5
2.5
± 100
1
10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min
Typ
Max
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73448
S-61086-Rev. C, 19-Jun-06
Si7634DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C unless noted
60
V
GS
= 10 thru 4 V
50
1.0
1.2
I
D
- Drain Current (A)
I
D
- Drain Current (A)
40
0.8
30
0.6
20
3V
10
0.4
T
C
= 125 °C
0.2
25 °C
- 55 °C
0
0.0
0.4
0.8
1.2
1.6
2.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.0080
0.0075
r
DS(on)
- On-Resistance (Ω)
0.0070
0.0065
0.0060
0.0055
0.0050
0.0045
0.0040
0.0035
0.0030
0
10
20
30
40
50
0
0
6
V
GS
= 10 V
3000
V
GS
= 4.5 V
C - Capacitance (pF)
2400
3600
Transfer Characteristics
C
iss
1800
1200
C
oss
600
C
rss
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
I
D
= 17 A
V
GS
- Gate-to-Source Voltage (V)
5
V
DS
= 10 V
15 V
4
20 V
3
r
DS(on)
- On-Resistance
(Normalized)
1.4
1.6
V
GS
= 10 V
I
D
= 17 A
Capacitance
1.2
1.0
2
1
0.8
0
0
6
12
18
24
30
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 73448
S-61086-Rev. C, 19-Jun-06
On-Resistance vs. Junction Temperature
www.vishay.com
3
Si7634DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C unless noted
60
0.025
I
D
= 17 A
T
J
= 150 °C
I
S
- Source Current (A)
10
0.020
r
DS(on)
- On-Resistance (Ω)
0.015
1
T
J
= 25 °C
0.010
T
J
= 125 °C
0.005
T
J
= 25 °C
0.1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0.000
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4
I
D
= 250 µA
200
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance (V)
160
0.0
Power (W)
120
- 0.2
80
- 0.4
40
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (sec)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
*Limited by
r
DS(on)
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
10 s
dc
1
10
100
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which r
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73448
S-61086-Rev. C, 19-Jun-06
Si7634DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C unless noted
80
70
60
I
D
- Drain Current (A)
50
40
30
Package Limited
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
60
6
50
5
40
Power
Power
4
30
3
20
2
10
1
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
*The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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