2SK3528-01R
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-3PF
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol
Ratings
Unit
V
V
DS
600
V
V
DSX *5
600
A
Continuous drain current
I
D
±17
A
Pulsed drain current
I
D(puls]
±68
V
Gate-source voltage
V
GS
±30
A
Repetitive or non-repetitive
I
AR
*2
17
mJ
Maximum Avalanche Energy
E
AS
*1
412
kV/µs
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
kV/µs
°C
Max. power dissipation
P
D
Ta=25
3.125
W
°C
Tc=25
120
+150
Operating and storage
T
ch
°C
-55 to +150
temperature range
T
stg
°C
Isolation Voltage
V
ISO *6
2
kVrms
< BV
DSS
, Tch < 150°C
*1 L=2.62mH, Vcc=60V *2 Tch <150°C *3 I
F
< -I
D
, -di/dt=50A/µs, Vcc =
=
=
=
*4 VDS< 600V *5 V
GS
=-30V *6 t=60sec f=60Hz
=
Item
Drain-source voltage
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
µA
I
D
= 250
V
DS
=V
GS
V
DS
=600V V
GS
=0V
V
DS
=480V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=8.5A V
GS
=10V
I
D
=8.5A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=8.5A
V
GS
=10V
R
GS
=10
Ω
V
CC
=300V
I
D
=17A
V
GS
=10V
L=2.62mH T
ch
=25°C
I
F
=17A V
GS
=0V T
ch
=25°C
I
F
=17A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
T
ch
=25°C
T
ch
=125°C
Min.
600
3.0
Typ.
Max.
5.0
25
250
100
0.37
Units
V
V
µA
nA
Ω
S
pF
10
10
0.29
20
2280
3420
290
435
16
24
26
39
37
56
78
117
13
19
54
81
15
23
20
30
0.93
0.7
10.0
ns
nC
17
1.50
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
1.042
40.0
Units
°C/W
°C/W
1
2SK3528-01R
Characteristics
Allowable Power Dissipation
PD=f(Tc)
FUJI POWER MOSFET
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
45
40
35
20V
10V
8V
7.0V
140
120
100
30
6.5V
ID [A]
80
PD [W]
25
20
15
60
40
10
20
5
0
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
6.0V
VGS=5.5V
0
18
20
Tc [
°
C]
VDS [V]
Typical Transfer Characteristic
100
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
10
10
ID[A]
gfs [S]
1
1
0.1
0
1
2
3
4
5
6
7
8
9
10
0.1
0.1
1
10
100
VGS[V]
ID [A]
Typical Drain-Source on-state Resistance
0.8
0.7
0.6
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
VGS=
5.5V
6.0V
6.5V
1.0
0.9
0.8
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8.5A,VGS=10V
RDS(on) [
Ω
]
0.7
0.5
0.4
0.3
0.2
0.2
0.1
0.0
0
5
10
15
20
25
30
35
40
45
0.1
0.0
-50
-25
0
25
50
75
100
125
150
7.0V
8V
10V
20V
RDS(on) [
Ω
]
0.6
0.5
0.4
0.3
typ.
max.
ID [A]
Tch [
°
C]
2
2SK3528-01R
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
24
22
20
max.
Typical Gate Charge Characteristics
VGS=f(Qg):ID=17A, Tch=25°C
Vcc= 300V
VGS(th) [V]
5.0
4.5
18
Vcc= 120V
16
14
Vcc= 480V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
min.
VGS [V]
4.0
12
10
8
6
4
2
0
0
20
40
60
80
100
120
Tch [
°
C]
Qg [nC]
10
1
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Forward Characteristics of Reverse Diode
100
IF=f(VSD):80µs Pulse test,Tch=25°C
Ciss
10
0
10
C [nF]
10
-1
Coss
IF [A]
1
0.1
0.00
10
-2
Crss
10
-3
10
-1
10
0
10
1
10
2
10
3
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
Typical Switching Characteristics vs. ID
10
3
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
500
450
400
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=17A
10
2
td(off)
350
300
t [ns]
td(on)
EAV [mJ]
tf
0
1
2
250
200
150
100
50
10
1
tr
10
0
0
-1
10
10
10
10
0
25
50
75
100
125
150
ID [A]
starting Tch [
°
C]
3
2SK3528-01R
FUJI POWER MOSFET
10
1
Transient Thermal Impedance
Zth(ch-c)=f(t):D=t/T,D=0
10
0
Zth(ch-c) [ C/W]
o
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
Maximum Avalanche Current Pulsewidth
10
2
I
AV
=f(t
AV
):starting Tch=25°C. Vcc=60V
Avalanche current I
AV
[A]
10
1
Single Pulse
10
0
10
-1
10
-8
10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
4
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