FXT555 datasheet, PDF - EEWORLD Datasheet

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FXT555: DescriptionPNP SILICON PLANAR MEDIUM POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size26KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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FXT555 Overview

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

FXT555 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	150 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.3 V

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PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

FXT555

ISSUE 1 MARCH 94

FEATURES

* 150 Volt V

CEO

* 1 Amp continuous current

* P

tot

= 1 Watt

B

C

E

REFER TO ZTX555 FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

SYMBOL

E-Line

TO92 Compatible

VALUE

-160

-150

-5

-2

-1

1

-55 to +200

UNIT

V

A

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-on Voltage

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

Emitter Cut-Off Current I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

Static Forward Current h

FE

Transfer Ratio

Transition

Frequency

Output Capacitance

f

T

C

obo

3-40

50

100

10

MIN.

-160

-150

-5

-0.1

-0.3

-1

TYP.

MAX.

UNIT

V

µ

A

µ

A

CONDITIONS.

I

C

=-100

µ

A, I

E

=0

I

C

=-10mA, I

B

=0*

I

E

=-100

µ

A, I

C

=0

V

CB

=-140V

V

EB

=-4V, I

C

=0

V

I

C

=-100mA, I

B

=-10mA*

I

C

=-100mA, I

B

=-10mA*

IC=-100mA, V

CE

=-10V*

300

MHz

pF

I

C

=-10mA, V

CE

=-10V*

I

C

=-300mA, V

CE

=-10V*

I

C

=-50mA, V

CE

=-10V*

f=100MHz

V

CE

=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

FXT555 Related Products

	FXT555
Description	PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	150 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.3 V

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