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BC557

Description
Bipolar Transistors - BJT TRANS GP BULK DLT
CategoryDiscrete semiconductor    The transistor   
File Size67KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BC557 Overview

Bipolar Transistors - BJT TRANS GP BULK DLT

BC557 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)120
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
surface mountNO
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
BC556; BC557
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 15
2004 Oct 11

BC557 Related Products

BC557 BC557B112 BC556B112 BC557B BC557C
Description Bipolar Transistors - BJT TRANS GP BULK DLT Bipolar Transistors - BJT TRANS GP BULK DLT PIN Bipolar Transistors - BJT TRANS GP BULK DLT PIN Bipolar Transistors - BJT TRANS GP BULK DLT Bipolar Transistors - BJT TRANS GP BULK DLT
Configuration Single Single Single Single Single
Is it Rohs certified? incompatible - - incompatible incompatible
Maker NXP - - NXP NXP
Reach Compliance Code unknown - - unknown unknown
Maximum collector current (IC) 0.1 A - - 0.1 A 0.1 A
Minimum DC current gain (hFE) 120 - - 180 420
Maximum operating temperature 150 °C - - 150 °C 150 °C
Polarity/channel type PNP - - PNP PNP
Maximum power dissipation(Abs) 0.625 W - - 0.625 W 0.625 W
surface mount NO - - NO NO
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