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DTA114ECA-TP

Description
Bipolar Transistors - Pre-Biased Sgle PNP, -100mA
CategoryDiscrete semiconductor    The transistor   
File Size219KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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DTA114ECA-TP Overview

Bipolar Transistors - Pre-Biased Sgle PNP, -100mA

DTA114ECA-TP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC)0.1 A
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
DTA114ECA
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors
The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have the
advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making
device design easy
Halogen
free available upon request by adding suffix "-HF"
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Min
---
-40
---
---
---
-55
Typ
-50
---
-50
-100
200
150
---
Max
---
10
---
---
---
150
Unit
V
V
mA
mW
PNP
Digital Transistors
SOT-23
A
D
3
1
C
2
Absolute maximum ratings @ 25
Symbol
V
CC
V
IN
I
O
I
C(MAX)
P
d
T
j
T
stg
B
1. IN
2. GND
3. OUT
F
E
G
H
J
Electrical Characteristics @ 25
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
Parameter
Input voltage (V
CC
=-5V, I
O
=-100
­A)
(V
O
=-0.3V, I
O
=-10mA)
Output voltage (I
O
/I
I
=-10mA/-0.5mA
Input current (V
I
=-5V)
Output current (V
CC
=-50V, V
I
=0)
DC current gain (V
O
=-5V, I
O
=-5mA)
Input resistance
Resistance ratio
Transition frequency
(V
CE
=-10V, I
E
=5mA, f=100MHz)
Min
---
-3.0
---
---
---
30
7.0
0.8
---
Typ
---
---
---
---
---
---
10
1.0
250
Max
-0.5
---
-0.3
-0.88
-0.5
---
13
1.2
---
Unit
V
V
V
mA
­A
MHz
K
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MAX
.120
.104
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
DIM
A
B
C
D
E
F
G
H
J
K
MARKING: 14
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com
Revision:
B
1 of 2
2013/01/01
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