Bipolar Transistors - BJT IGBT & Power Bipolar
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | STMicroelectronics |
| Parts packaging code | SIP |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Samacsys Description | BD442, PNP Bipolar Transistor, 4 A 80 V HFE:15 3 MHz Power, 3-Pin SOT-32 |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 4 A |
| Collector-emitter maximum voltage | 80 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 15 |
| JEDEC-95 code | TO-126 |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Maximum power consumption environment | 36 W |
| Maximum power dissipation(Abs) | 36 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 3 MHz |
| VCEsat-Max | 0.8 V |
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