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BSS123NH6433XTMA1

Description
MOSFET N-Ch 100V 190mA SOT-23-3
CategoryDiscrete semiconductor    The transistor   
File Size570KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSS123NH6433XTMA1 Overview

MOSFET N-Ch 100V 190mA SOT-23-3

BSS123NH6433XTMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
Factory Lead Time10 weeks
Samacsys DescriptionMOSFET N-Ch 100V 190mA SOT-23-3
Other featuresLOGIC LEVEL COMPATIBLE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)0.19 A
Maximum drain-source on-resistance6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)3.1 pF
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
GuidelineAEC-Q101
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Base Number Matches1
BSS123N
OptiMOS Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant, Halogen free
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
100
6
10
0.19
A
V
W
PG-SOT23
3
1
2
Type
BSS123N
Package
SOT23
Tape and Reel Information
H6327: 3000 pcs/ reel
Marking
SAs
Halogon Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=0.19 A,
R
GS
=25
W
I
D
=0.19 A,
V
DS
=80 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
0.19
0.15
0.77
2.0
mJ
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±20
0.5
-55 ... 150
0 (<250V)
260 °C
55/150/56
V
W
°C
Rev 2.3
page 1
2012-11-21

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