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BC547BRL1

Description
Bipolar Transistors - BJT 100mA 50V NPN
CategoryDiscrete semiconductor    The transistor   
File Size107KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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Bipolar Transistors - BJT 100mA 50V NPN

BC547BRL1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging codeCASE 29-11
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresEUROPEAN PART NUMBER
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
BC546B, BC547A, B, C,
BC548B, C
Amplifier Transistors
NPN Silicon
Features
http://onsemi.com
Pb−Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
BC546
BC547
BC548
BC546
BC547
BC548
Symbol
V
CEO
Value
65
45
30
80
50
30
6.0
100
625
5.0
1.5
12
−55
to +150
Unit
Vdc
2
BASE
3
EMITTER
Collector - Base Voltage
V
CBO
Vdc
Emitter - Base Voltage
Collector Current
Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
TO−92
CASE 29
STYLE 17
12
1
2
3
STRAIGHT LEAD
3
BENT LEAD
TAPE & REEL
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
MARKING DIAGRAM
BC
54xy
AYWW
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
x
y
A
Y
WW
G
= 6, 7, or 8
= A, B or C
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2012
June, 2012
Rev. 7
1
Publication Order Number:
BC546/D

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