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AAT8307

Description
20V P-Channel Power MOSFET
File Size158KB,6 Pages
ManufacturerAnalogicTech
Websitehttp://www.analogictech.com/
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AAT8307 Overview

20V P-Channel Power MOSFET

20V P-Channel Power MOSFET
General Description
The AAT8307 is a low threshold P Channel MOS-
FET designed for the battery, cell phone, and PDA
markets. Using AnalogicTech™'s proprietary ultra-
high density Trench technology, and space saving
small outline J-lead package, performance superi-
or to that normally found in a larger footprint has
been squeezed into the area of a TSOP6 package.
AAT8307
Features
V
DS(MAX)
= -20V
I
D(MAX)
1
= -6.0A @ 25°C
Low R
DS(ON)
:
• 35 mΩ @ V
GS
= -4.5V
• 60 mΩ @ V
GS
= -2.5V
TSOPJW-8 Package
Applications
Battery Packs
Cellular & Cordless Telephones
Battery-powered portable equipment
Load Switches
D
8
Preliminary Information
Top View
D
7
D
6
D
5
1
S
2
S
3
S
4
G
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
A
=25°C unless otherwise noted)
Value
-20
±12
±6.0
±4.8
±32
-1.9
2.1
1.3
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150°C
1
Units
V
T
A
= 25°C
T
A
= 70°C
1
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
Maximum Power Dissipation
1
A
T
A
= 25°C
T
A
= 70°C
W
°C
Operating Junction and Storage Temperature Range
Thermal Characteristics
Symbol
R
θJA
R
θJA2
R
θJF
Description
Junction-to-Ambient steady state
1
Junction-to-Ambient t<5 seconds
1
Junction-to-Foot
1
Typ
90
48
31
Max
110
59
37
Units
°C/W
°C/W
°C/W
8307.2003.06.0.62
1

AAT8307 Related Products

AAT8307 AAT8307ITS-T1
Description 20V P-Channel Power MOSFET 20V P-Channel Power MOSFET

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