Ordering number : EN6619C
5LP01C
P-Channel Small Signal MOSFET
–50V, –0.07A, 23
Ω
, Single CP
Features
•
•
•
•
http://onsemi.com
Low ON-resistance
Ultrahigh-speed switching
1.5V drive
Halogen free compliance
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
Conditions
Ratings
--50
±10
--0.07
--0.28
0.25
150
-
-55 to +150
Unit
V
V
A
A
W
°C
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
*
Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7013A-013
2.9
3
0.1
Ordering & Package Information
Device
5LP01C-TB-E
Package
CP
SC-59, TO-236,
SOT-23, TO-236AB
CP
SC-59, TO-236,
SOT-23, TO-236AB
Shipping
3,000
pcs./reel
memo
Pb-Free
5LP01C-TB-E
5LP01C-TB-H
0.5
5LP01C-TB-H
3,000
pcs./reel
Pb-Free
and
Halogen Free
2.5
1.5
0.5
1
0.95
2
Packing Type: TB
0.4
Marking
LOT No.
LOT No.
1 : Gate
2 : Source
3 : Drain
CP
XB
0.3
TB
0.05
1.1
Electrical Connection
3
1
2
Semiconductor Components Industries, LLC, 2013
July, 2013
72413 TKIM TC-00002969/62712 TKIM/33006PE MSIM TB-00002201/92500 TS IM TA-2036 No.6619-1/6
5LP01C
Electrical Characteristics
at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS= --70mA, VGS=0V
VDS= --10V, VGS= --10V, ID= --70mA
See specified Test Circuit.
Conditions
ID= --1mA, VGS=0V
VDS= --50V, VGS=0V
VGS=±8V, VDS=0V
VDS= --10V, ID= --100μA
VDS= --10V, ID= --40mA
ID= --40mA, VGS= --4V
ID= --20mA, VGS= --2.5V
ID= --5mA, VGS= --1.5V
VDS= --10V, f=1MHz
-
-0.4
70
100
18
20
30
7.4
4.2
1.3
20
35
160
150
1.40
0.16
0.23
--0.85
--1.2
23
28
60
Ratings
min
--50
--1
±10
--1.4
typ
max
Unit
V
μA
μA
V
mS
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VDD= --25V
VIN
0V
--4V
VIN
PW=10μs
D.C.≤1%
G
5LP01C
P.G
50Ω
S
D
ID= --40mA
RL=625Ω
VOUT
No.6619-2/6
5LP01C
--0.07
ID -- VDS
--6
.0V
--0.14
ID -- VGS
Ta=
--
25
°
C
.5V
--3
.0
V
V
--0.06
--
5
2.
V
--0.12
VDS= --10V
--4
.0
Drain Current, ID -- A
--3
--0.05
Drain Current, ID -- A
--0.10
--0.03
--0.06
--0.02
VGS= --1.5V
--0.04
--0.01
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
--0.02
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
Drain to Source Voltage, VDS -- V
40
IT00090
100
RDS(on) -- VGS
Gate to Source Voltage, VGS -- V
75
°
--0.04
--0.08
C
25
°
C
--2.0V
IT00091
RDS(on) -- ID
Ta=25°C
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
35
7
VGS= --4V
30
5
25
3
--20mA
20
ID= --40mA
Ta=75°C
2
25°C
--25°C
15
10
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
10
--0.01
2
3
5
7
--0.1
2
3
Gate to Source Voltage, VGS -- V
1000
7
IT00092
100
RDS(on) -- ID
Drain Current, ID -- A
IT00093
RDS(on) -- ID
VGS= --2.5V
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
7
VGS= --1.5V
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
5
3
2
5
100
7
5
3
2
3
Ta=75°C
25°C
--25°C
25°C
Ta=75°C
--25°C
2
3
5
7
--0.1
2
3
2
10
--0.01
10
--0.001
2
3
5
7
--0.01
2
3
Drain Current, ID -- A
40
IT00094
1.0
Drain Current, ID -- A
IT00095
RDS(on) -- Ta
|
y
fs
|
-- ID
Forward Transfer Admittance,
|
yfs
|
-- S
7
5
3
2
VDS= --10V
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
35
30
25
20
.5V
--2
=
S
.0V
, VG
--4
A
=
0m
S
--2
VG
=
A,
ID
0m
-4
=-
ID
0.1
7
5
3
2
5
°
C
Ta= --2
75
°
C
25
°
C
15
10
--60
--40
--20
0
20
40
60
80
100
120
140
160
0.01
--0.01
2
3
5
7
--0.1
2
3
Ambient Temperature, Ta --
°C
IT00096
Drain Current, ID -- A
IT00097
No.6619-3/6
5LP01C
3
2
IS -- VSD
VGS=0V
Switching Time, SW Time -- ns
1000
7
5
3
2
SW Time -- ID
VDD= --25V
VGS = --4V
tf
td(off)
Source Current, IS -- A
--0.1
7
5
100
7
5
3
2
3
tr
td(on)
25
°
C
--25
°
C
2
Ta=7
5
°
C
--0.01
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
--1.2
IT00098
10
--0.01
2
3
5
7
Diode Forward Voltage, VSD -- V
100
7
5
3
2
Ciss, Coss, Crss -- VDS
f=1MHz
Gate to Source Voltage, VGS -- V
Drain Current, ID -- A
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
--0.1
IT00099
VGS -- Qg
VDS= --10V
ID= --70mA
Ciss, Coss, Crss -- pF
10
7
5
3
2
1.0
7
5
3
2
0.1
0
--5
--10
--15
--20
--25
--30
Ciss
Coss
Crss
--35
--40
--45
--50
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain to Source Voltage, VDS -- V
0.30
IT00100
Total Gate Charge, Qg -- nC
IT00101
PD -- Ta
Allowable Power Dissipation, PD -- W
0.25
0.20
0.15
0.10
0.05
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT02382
No.6619-4/6
5LP01C
Outline Drawing
5LP01C-TB-E, 5LP01C-TB-H
Mass (g) Unit
0.013 mm
* For reference
Land Pattern Example
Unit: mm
0.8
1.0
2.4
0.95
0.95
No.6619-5/6
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