BAV23C-G
www.vishay.com
Vishay Semiconductors
Small Signal Switching Diode, Dual
FEATURES
3
• Silicon epitaxial planar diode
• Fast switching dual diode with common cathode
• AEC-Q101 qualified
1
18108_1
2
• Base P/N-G3 - green, commercial grade
• Material categorization:
For definitions of compliance
www.vishay.com/doc?99912
please
see
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.1 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAV23C-G
ORDERING CODE
BAV23C-G3-08 or BAV23C-G3-18
INTERNAL CONSTRUCTION
Dual diodes common cathode
TYPE MARKING
KT7
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Continuous reverse voltage
Repetitive peak reverse voltage
Non-repetitive peak forward current
Non-repetitive peak forward surge current
Maximum average forward rectified current
Forward continuous current
Power dissipation
(2)
(2)
(1)
TEST CONDITION
SYMBOL
V
R
V
RRM
VALUE
200
250
9.0
0.5
200
400
625
350
UNIT
V
V
A
A
mA
mA
mA
mW
t = 1 μs
t=1s
I
FSM
I
FSM
I
FAV
I
F
I
FRM
P
tot
Repetitive peak forward current
Notes
(1)
Measured under pulse conditions; pulse time = t
0.3 ms
p
(2)
Device on fiberglass substrate
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
(1)
Junction temperature
Storage temperature range
Operating temperature range
Note
(1)
Device on fiberglass substrate
TEST CONDITION
SYMBOL
R
thJA
T
j
T
stg
T
op
VALUE
357
150
- 65 to + 150
- 55 to + 150
UNIT
K/W
°C
°C
°C
Rev. 1.3, 17-May-13
Document Number: 85866
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAV23C-G
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
R
= 100 μA, t
p
= 300 μs
I
F
= 100 mA
I
F
= 200 mA
V
R
= 200 V
V
R
= 200 V, T
j
= 150 °C
I
F
= 10 mA
V
R
= 0 V, f = 1 MHz
SYMBOL
V
(BR)
V
F
V
F
I
R
I
R
r
f
C
D
t
rr
5
5
50
MIN.
250
1
1.25
100
100
TYP.
MAX.
UNIT
V
V
V
nA
μA
pF
ns
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Breakdown voltage
Forward voltage
Reverse current
Dynamic forward resistance
Diode capacitance
Reverse recovery time
I
F
= I
R
= 30 mA, i
R
= 3 mA,
R
L
= 100
500
450
400
350
P
tot
(mW)
300
250
200
150
100
50
0
0
50
100
150
T
amb
(°C)
Fig. 1 - P
tot
- Admissible Power Dissipation vs. Ambient Temperature
100
10
I
FSM
(A)
1
T
j
= 25 °C - prior to
surge
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
Test pulse t
p
(s)
Fig. 2 - I
FSM
- Non-Repetitive Peak Forward Current vs. Pulse Duration - Maximum Admissible Values of Square Pulses
Rev. 1.3, 17-May-13
Document Number: 85866
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAV23C-G
www.vishay.com
Vishay Semiconductors
1.0E+0
100.0E-3
T
amb
= 150 °C
10.0E-3
I
F
(A)
T
amb
= 125 °C
1.0E-3
T
amb
= 100 °C
T
amb
= 75 °C
100.0E-6
T
amb
= 50 °C
T
amb
= 25 °C
10.0E-6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
(V)
Fig. 3 - V
F
- Typical Forward Current vs. Forward Voltage vs. Various Temperatures
1.00E-03
1.00E-04
T
amb
= 150 °C
1.00E-05
T
amb
= 125 °C
T
amb
= 100 °C
T
amb
= 75 °C
T
amb
= 50 °C
T
amb
= 25 °C
1.00E-08
1.00E-09
0
50
100
150
200
250
300
I
R
(A)
1.00E-06
1.00E-07
V
R
(V)
Fig. 4 - I
R
- Typical Reverse Current vs. Reverse Voltage vs. Various Temperatures
Rev. 1.3, 17-May-13
Document Number: 85866
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAV23C-G
www.vishay.com
PACKAGE DIMENSIONS
in millimeters (inches):
SOT-23
1.15 (0.045)
0.1 (0.004) max.
0.9 (0.035)
0.9 (0.035)
Vishay Semiconductors
3.1 (0.122)
2.8 (0.110)
0.550 ref. (0.022 ref.)
0.175 (0.007)
0.098 (0.004)
0.2 (0.008)
0.5 (0.020)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
0.45 (0.018)
1.43 (0.056)
1.20 (0.047)
0.35 (0.014)
Foot print recommendation:
0.7 (0.028)
1 (0.039)
0.9 (0.035)
1 (0.039)
0.9 (0.035)
2 (0.079)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
0.95 (0.037)
0.95 (0.037)
Rev. 1.3, 17-May-13
Document Number: 85866
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0° t
o8
°
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
1
Document Number: 91000
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