BLC8G21LS-160AV
Power LDMOS transistor
Rev. 4 — 24 May 2017
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to
2025 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a Doherty demo board.
Test signal
1-carrier W-CDMA
1-carrier W-CDMA
[1]
f
(MHz)
1805 to 1880
1880 to 2025
I
Dq
(mA)
350
350
V
DS
(V)
28
28
P
L(AV)
(W)
22
22
G
p
(dB)
16
15.5
D
(%)
49
47
ACPR
(dBc)
30
[1]
30
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Designed for broadband operation (1805 MHz to 2025 MHz)
Decoupling leads to enable improved video bandwidth
Excellent ruggedness
High efficiency
Excellent thermal stability
Internally matched for ease of use
High power gain
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base station and multi-carrier applications in the 1805 MHz to
2025 MHz frequency range
BLC8G21LS-160AV
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
[1]
Pinning
Description
drain1 (main)
drain2 (peak)
gate1 (main)
gate2 (peak)
video decoupling (main)
video decoupling (peak)
source
[1]
Simplified outline
5
1
2
6
Graphic symbol
1, 5
3
7
4
7
3
4
2, 6
aaa-007731
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLC8G21LS-160AV -
Description
air cavity plastic earless flanged package; 6 leads
Version
SOT1275-1
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
5. Thermal characteristics
Table 5.
Symbol
Thermal characteristics
Parameter
Conditions
T
case
= 80
C;
V
DS
= 28 V;
I
Dq
= 400 mA
P
L
= 23 W
P
L
= 89 W
0.371
0.278
K/W
K/W
Typ
Unit
R
th(j-case)
thermal resistance from junction to case
BLC8G21LS-160AV
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 4 — 24 May 2017
2 of 14
BLC8G21LS-160AV
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
Main device
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
V
GS
= 0 V; I
D
= 0.72 mA
V
DS
= 10 V; I
D
= 72 mA
V
DS
= 28 V; I
D
= 432 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 72 mA
65
1.5
1.6
-
-
-
-
-
-
1.9
2.1
-
14
-
205
-
2.3
2.4
1.4
-
140
323
V
V
V
A
A
nA
S
m
Conditions
Min
Typ
Max
Unit
0.60 -
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 2.52 A
V
GS
= 0 V; I
D
= 1.1 mA
V
DS
= 10 V; I
D
= 110 mA
V
DS
= 28 V; I
D
= 660 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 110 mA
Peak device
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
65
1.5
1.6
-
-
-
-
-
-
1.9
2.0
-
20
-
145
-
2.3
2.4
1.4
-
140
215
V
V
V
A
A
nA
S
m
0.97 -
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 3.85 A
Table 7.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 7.2 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 1 - 64 DPCH; f
1
= 1880 MHz; f
2
= 2025 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 200 mA (main); V
GS(amp)peak
= 0.5 V; T
case
= 25
C; unless otherwise specified; in an
asymmetrical Doherty production test circuit at 1880 MHz to 2025 MHz.
Symbol
G
p
RL
in
D
ACPR
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Conditions
P
L(AV)
= 22.5 W
P
L(AV)
= 22.5 W
P
L(AV)
= 22.5 W
P
L(AV)
= 22.5 W
Min
13.8
-
40
-
Typ
15
10
45
30
Max
-
6
-
25
Unit
dB
dB
%
dBc
Table 8.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 7.2 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 1 - 64 DPCH; f = 2025 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 200 mA (main); V
GS(amp)peak
= 0.5 V; T
case
= 25
C; unless otherwise specified; in an
asymmetrical Doherty production test circuit at 1880 MHz to 2025 MHz.
Symbol
PAR
O
P
L(M)
BLC8G21LS-160AV
Parameter
output peak-to-average ratio
peak output power
Conditions
P
L(AV)
= 60 W
Min
4.3
158
Typ
4.9
185
Max
-
-
Unit
dB
W
3 of 14
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 4 — 24 May 2017
BLC8G21LS-160AV
Power LDMOS transistor
7. Test information
7.1 Ruggedness in Doherty operation
The BLC8G21LS-160AV is capable of withstanding a load mismatch corresponding to a
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 200 mA (main); V
GS(amp)peak
= 0.5 V; P
L
= 120 W (CW); f = 1880 MHz.
7.2 Impedance information
Table 9.
Typical impedance of main device
Measured load-pull data of main device; I
Dq
= 450 mA (main); V
DS
= 28 V.
f
(MHz)
1805
1880
1920
2025
1805
1880
1920
2025
[1]
[2]
Z
S
[1]
()
1.63
j7.04
2.43
j7.93
3.64
j9.19
9.22
j10.74
1.63
j7.04
2.43
j7.93
3.64
j9.19
9.22
j10.74
Z
L
[1]
()
2.69
j7.69
2.69 j7.69
3.32
j8.33
2.69
j7.69
7.07 j5.17
5.49
j4.59
4.63
j4.53
3.29
j5.36
P
L
[2]
(W)
87.05
84.00
82.41
83.16
55.89
55.05
54.27
55.68
D
[2]
(%)
55.92
55.41
58.81
60.51
69.34
68.21
67.40
65.66
G
p
[2]
(dB)
16.44
16.40
17.29
17.28
19.16
19.14
18.94
18.96
Maximum power load
Maximum drain efficiency load
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
Table 10. Typical impedance of peak device
Measured load-pull data of peak device; I
Dq
= 600 mA (peak); V
DS
= 28 V.
f
(MHz)
1805
1880
1920
2025
1805
1880
1920
2025
[1]
[2]
Z
S
[1]
()
1.11
j6.63
1.60
j7.94
3.45
j8.58
5.33
j7.56
1.11
j6.63
1.60
j7.94
3.45
j8.58
5.33
j7.56
Z
L
[1]
()
3.23
j7.06
3.23
j7.06
3.23
j7.06
3.97
j7.59
5.83
j3.19
4.65
j3.75
3.94
j3.76
3.24
j4.34
P
L
[2]
(W)
126.00
122.98
120.56
128.56
80.08
84.85
81.80
82.20
D
[2]
(%)
56.38
55.66
55.34
58.56
66.92
65.61
64.85
65.52
G
p
[2]
(dB)
16.26
16.28
16.18
16.97
18.77
18.59
18.37
18.89
Maximum power load
Maximum drain efficiency load
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
BLC8G21LS-160AV
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 4 — 24 May 2017
4 of 14
BLC8G21LS-160AV
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Recommended impedances for Doherty design
Table 11. Typical impedance of main device at 1 : 1 load
Measured load-pull data of main device; I
Dq
= 450 mA (main); V
DS
= 28 V.
f
(MHz)
1805
1880
1920
2025
[1]
[2]
[3]
Z
S
[1]
()
1.63
j7.04
2.43
j7.93
3.64
j9.19
9.22
j10.74
Z
L
[1]
()
4.46
j6.76
4.46
j6.76
4.46
j6.76
3.23
j7.06
P
L
[2]
(dBm)
48.9
48.6
48.6
48.7
D
[3]
(%)
40.0
41.0
41.0
41.0
G
p
[3]
(dB)
21.0
21.3
21.3
21.1
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
at P
L(AV)
= 43.5 dBm.
Table 12. Typical impedance of main device at 1 : 2.5 load
Measured load-pull data of main device; I
Dq
= 450 mA (main); V
DS
= 28 V.
f
(MHz)
1805
1880
1920
2025
[1]
[2]
[3]
Z
S
[1]
()
1.63
j7.04
2.43
j7.93
3.64
j9.19
9.22
j10.74
Z
L
[1]
()
7.87
j2.50
7.43
j2.21
7.43
j2.21
3.94
j3.76
P
L
[2]
(dBm)
46.2
45.8
45.8
45.9
D
[3]
(%)
49.5
53.1
53.1
54.6
G
p
[3]
(dB)
22.2
22.9
22.9
22.9
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
at P
L(AV)
= 43.5 dBm.
7.4 VBW in Doherty operation
The BLC8G21LS-160AV shows 110 MHz (typical) video bandwidth in Doherty demo
board in 1880 MHz at V
DS
= 28 V; I
Dq
= 200 mA and V
GS(amp)peak
= 0.5 V.
BLC8G21LS-160AV
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 4 — 24 May 2017
5 of 14
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