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BLF8G20LS-230VJ

Description
RF MOSFET Transistors Power LDMOS trans
Categorysemiconductor    Discrete semiconductor   
File Size866KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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RF MOSFET Transistors Power LDMOS trans

BLF8G20LS-230VJ Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
RoHSDetails
TechnologySi
PackagingCut Tape
PackagingReel
TypeRF Power MOSFET
Factory Pack Quantity100
BLF8G20LS-230V
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
230 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
1805 to 1880
I
Dq
(mA)
1800
V
DS
(V)
28
P
L(AV)
(W)
55
G
p
(dB)
18
D
(%)
31.7
ACPR
(dBc)
29
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for multi standard and multi carrier applications in the 1800 MHz
to 2000 MHz frequency range
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