NXP Semiconductors
Product specification
MMIC wideband amplifier
FEATURES
Internally matched to 50
Very wide frequency range (4 GHz at 3 dB bandwidth)
Very flat 20 dB gain (DC to 2.9 GHz at 1 dB flatness)
10 dBm saturated output power at 1 GHz
High linearity (18 dBm IP3
(out)
at 1 GHz)
Low current (14.6 mA)
Unconditionally stable.
APPLICATIONS
LNB IF amplifiers
Cable systems
ISM
General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
QUICK REFERENCE DATA
SYMBOL
V
S
I
S
s
21
2
NF
P
L(sat)
PARAMETER
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
f = 1 GHz
f = 1 GHz
f = 1 GHz
CAUTION
CONDITIONS
3
14.6
20.1
4.8
9.7
TYP.
1
Top view
Marking code:
C2-.
BGM1012
PINNING
PIN
1
2, 5
3
4
6
V
S
GND2
RF out
GND1
RF in
DESCRIPTION
6
5
4
1
6
3
2
3
MAM455
4
2, 5
Fig.1 Simplified outline (SOT363) and symbol.
MAX.
4
UNIT
V
mA
dB
dB
dBm
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
2002 Sep 06
2
NXP Semiconductors
Product specification
MMIC wideband amplifier
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the
BGM1012 MMIC. The device is internally matched to
50
,
and therefore does not need any external matching.
The value of the input and output DC blocking capacitors
C2 and C3 should not be more than 100 pF for
applications above 100 MHz. However, when the device is
operated below 100 MHz, the capacitor value should be
increased.
The nominal value of the RF choke L1 is 100 nH. At
frequencies below 100 MHz this value should be
increased to 220 nH. At frequencies above 1 GHz a much
lower value (e.g. 10 nH) can be used to improve return
losses. For optimal results, a good quality chip inductor
such as the TDK MLG 1608 (0603), or a wire-wound SMD
type should be chosen.
Both the RF choke L1 and the 22 nF supply decoupling
capacitor C1 should be located as closely as possible to
the MMIC.
handbook, halfpage
BGM1012
In Fig.6 the MMIC is used as a driver to the power amplifier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
DC-block
handbook, halfpage
100 pF
input
DC-block
100 pF
DC-block
100 pF
output
MGU437
Fig.3 Easy cascading application circuit.
mixer
to IF circuit
or demodulator
wideband
amplifier
oscillator
Separate paths must be used for the ground planes of the
ground pins GND1 and GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
from RF
circuit
MGU438
Fig.4 Application as IF amplifier.
V
halfpage
handbook,
s
C1
Vs
RF input
C2
GND1
GND2
RF in
RF out
C3
MGU436
L1
RF output
handbook, halfpage
mixer
to IF circuit
or demodulator
LNA
wideband
amplifier
oscillator
MGU439
antenna
Fig.2 Typical application circuit.
Fig.5 Application as RF amplifier.
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
The excellent wideband characteristics of the MMIC make
it an ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
2002 Sep 06
5
handbook, halfpage
mixer
to power
amplifier
wideband
amplifier
oscillator
from modulation
or IF circuit
MGU440
Fig.6 Application as driver amplifier.
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