ZXTN08400BFF
400V NPN MEDIUM POWER HIGH VOLTAGE TRANSISTOR IN SOT23F
Features
BV
CEX
> 450V
BV
CEO
> 400V
BV
ECO
> 6V
I
C
= 0.5A Continuous Collector Current
Low Saturation Voltage V
CE(SAT)
< 175mV @ 500mA
1.5W Power Dissipation
Complementary PNP Type: ZXTP08400BFF
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23F
Case Material: Molded Plastic. ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.012 grams (Approximate)
Description
This NPN transistor has been designed for applications requiring high
voltage blocking. The SOT23F package is pin compatible with the
industry standard SOT23 foot print but offers lower profile and higher
power dissipation for applications where power density is of utmost
importance.
Applications
High Voltage
Low Saturation Voltage
Low Profile Small Package Outline
SOT23F
C
E
B
C
E
B
Top View
Pin Configuration
Top View
Device Symbol
Ordering Information
(Note 4)
Product
ZXTN08400BFFTA
Notes:
Compliance
AEC-Q101
Marking
1D5
Reel Size (inches)
7
Tape Width (mm)
8
Quantity per Reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT23F
1D5 = Product Type Marking Code
YW = Date Code Marking
Y = Year : 0~9
W = Week : A~Z : 1~26
a~z : 27~52
z represents 52 & 53 week
1D5
YW
ZXTN08400BFF
Document number: DS33675 Rev. 2 - 2
1 of 7
www.diodes.com
May 2016
© Diodes Incorporated
ZXTN08400BFF
Absolute Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage (Forward Blocking)
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse Blocking)
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEX
V
CEO
V
ECO
V
EBO
I
C
I
CM
I
B
Value
450
450
400
6
7
0.5
1
0.2
Unit
V
V
V
V
V
A
A
A
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
(Note 5)
Power Dissipation
Linear Derating Factor
(Note 6)
P
D
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
Value
0.84
6.72
1.34
10.72
1.5
12
2
16
149
93.4
83.3
60
43.8
-55 to +150
Unit
W
mW/°
C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
R
θJA
R
θJL
T
J,
T
STG
°
C/W
°
C/W
°
C
ESD Ratings
(Note 10)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper.
8. Same as Note 7, whilst measured at t < 5 seconds.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN08400BFF
Document number: DS33675 Rev. 2 - 2
2 of 7
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May 2016
© Diodes Incorporated
ZXTN08400BFF
Thermal Characteristics and Derating Information
1m
I
C
Collector Current (A)
1
Limited
I
C
Collector Current (A)
V
CE(SAT)
50mm x 50mm FR-4, 2oz Cu
100μ
100
10μ
10
1μ
1
BV
(BR)CEO
=400V
Failure may occur
in this region
100m
DC
1s
100ms
10m
Single Pulse
o
T
AMB
=25 C
10ms
1ms
100
s
BV
(BR)CEX
=450V
T
AMB
=25 C
o
1m
100m
1
10
100
0
100
200
300
400
500
600
700
V
CE
Collector-Emitter Voltage (V)
V
CE
Collector-Emitter Voltage (V)
Safe Operating Area
Thermal Resistance ( C/W)
80
o
Safe Operating Area
T
AMB
=25 C
2oz Cu
D=0.5
Maximum Power (W)
o
70
50mm x 50mm FR-4
60
50
40
30
20
10
0
100μ
100
1m
10m 100m
D=0.2
Single Pulse
D=0.05
D=0.1
100
Single Pulse
o
T
AMB
=25 C
50mm x 50mm FR-4
2oz Cu
10
1
10
100
1k
1
100μ
100
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Max Power Dissipation (W)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
15mm x 15mm FR-4, oz Cu
25mm x 25mm FR-4
2oz Cu
50mm x 50mm FR-4, 2oz Cu
Pulse Power Dissipation
20
40
60
80
100 120 140 160
o
Temperature ( C)
Derating Curve
ZXTN08400BFF
Document number: DS33675 Rev. 2 - 2
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ZXTN08400BFF
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Forward Blocking)
Collector-Emitter Breakdown Voltage
(Base Open) (Note 11)
Emitter-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
(Reverse Blocking)
Emitter-Collector Breakdown Voltage
(Base Open)
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS
(Note 11)
Static Forward Current Transfer Ratio
Symbol
BV
CBO
BV
CEX
BV
CEO
BV
EBO
BV
ECX
BV
ECO
I
CBO
I
CEX
I
EBO
Min
450
450
400
7
6
6
—
—
—
90
100
10
—
Typ
550
550
500
8.1
8
8.5
<1
—
Max
—
—
—
—
—
—
50
20
100
50
Unit
V
V
V
V
V
V
nA
µA
nA
nA
Test Condition
I
C
= 100µA
I
C
= 100µA, R
BE
≤1kΩ or
-1V < V
BE
< 0.25V
I
C
= 10mA
I
E
= 100µA
I
E
= 100µA, R
BC
≤1kΩ or
-0.25V < V
BC
< 0.25V
I
E
= 100µA
V
CB
= 360V
V
CB
= 360V, T
A
= +100°
C
V
CE
= 360V, R
BE
≤1kΩ
-1V < V
BE
< 0.25V
V
EB
= 5.6V
I
C
= 1mA, V
CE
= 5V
I
C
= 50mA, V
CE
= 5V
I
C
= 500mA, V
CE
= 5V
I
C
= 20mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 300mA, I
B
= 30mA
IC
= 500mA, I
B
= 100mA
I
C
=500mA, I
B
= 100mA
I
C
= 500mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 20V,
f = 20MHz
V
CB
= 20V, f = 1MHz
V
CC
= 100V,
I
C
= 100mA,
I
B1
=10mA
I
B2
= -20mA
<1
<1
165
180
20
70
50
120
125
865
800
40
8
100
52
3122
240
h
FE
300
85
70
170
175
950
900
—
10
—
—
—
—
—
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
(Note 11)
Transition Frequency
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Note:
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
f
T
C
OBO
t
D
t
R
t
S
t
F
mV
mV
mV
MHz
pF
ns
ns
ns
ns
—
—
—
—
—
—
—
—
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZXTN08400BFF
Document number: DS33675 Rev. 2 - 2
4 of 7
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May 2016
© Diodes Incorporated
ZXTN08400BFF
Typical Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
3.0
T
AMB
=25 C
o
1
I
C
/I
B
=50
2.5
I
C
/I
B
=10
150 C
o
V
CE(SAT)
(V)
V
CE(SAT)
(V)
2.0
100 C
o
I
C
/I
B
=20
1.5
1.0
0.5
25 C
o
100m
I
C
/I
B
=10
I
C
/I
B
=5
10m
1m
10m
100m
1
0.0
10m
-55 C
o
100m
1
I
C
Collector Current (A)
I
C
Collector Current (A)
V
CE(SAT)
v I
C
1.6
150 C
o
V
CE(SAT)
v I
C
V
CE
=10V
360
320
1.0
I
C
/I
B
=10
-55 C
o
25 C
o
Typical Gain (h
FE
)
Normalised Gain
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
-55 C
o
280
100 C
25 C
o
o
0.8
200
160
120
80
40
0
V
BE(SAT)
(V)
240
0.6
150 C
100 C
o
o
0.4
0.2
1m
10m
100m
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
1.0
0.8
V
CE
=10V
-55 C
o
V
BE(SAT)
v I
C
25 C
o
V
BE(ON)
(V)
0.6
0.4
100 C
o
150 C
o
0.2
1m
10m
100m
1
I
C
Collector Current (A)
V
BE(ON)
v I
C
ZXTN08400BFF
Document number: DS33675 Rev. 2 - 2
5 of 7
www.diodes.com
May 2016
© Diodes Incorporated
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