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BC327-AP

Description
Bipolar Transistors - BJT -45V, .8A
CategoryDiscrete semiconductor    The transistor   
File Size412KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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BC327-AP Overview

Bipolar Transistors - BJT -45V, .8A

BC327-AP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompliant
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)260 MHz
VCEsat-Max0.7 V
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BC327-16/25/40
BC328-16/25/40
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Capable of 0.625Watts of Power Dissipation.
Collector-current : -0.8A
Collector-base Voltage :V
CBO
=-50V(BC327) , V
CBO
=-30V(BC328)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Halogen
free available upon request by adding suffix "-HF"
to +150
to +150
PNP
Plastic-Encapsulate
Transistors
TO-92
A
E
Maximum Ratings
Operating temperature : -55
Storage temperature : -55
Symbol
Parameter
Electrical Characteristics @ 25
OFF CHARACTERISTICS
V
(BR)CEO
Unless Otherwise Specified
Min
Max
---
-45
-25
---
-50
-30
-5.0
Vdc
Units
Vdc
B
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
Collector-Emitter Breakdown Voltage
(I
C
=-10mAdc, I
B
=0)
BC327
BC328
Collector-Base Breakdown Voltage
(I
C
=-100µAdc, I
E
=0)
BC327
BC328
Collector-Emitter Breakdown Voltage
(I
E
=-10µAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=-45Vdc,I
E
=0)
BC327
(V
CB
=-25Vdc,I
E
=0)
BC328
Collector Cutoff Current
BC327
(V
CE
=-40Vdc,I
B
=0)
(V
CE
=-20Vdc,I
B
=0)
BC328
Emitter Cutoff Current
(V
EB
=-4.0Vdc, I
C
=0)
DC Current Gain
(I
C
=-100mAdc, V
CE
=-1.0Vdc)
DC Current Gain
(I
C
=-300mAdc, V
CE
=-1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-500mAdc, I
B
=-50mAdc)
Base-Emitter Saturation Voltage
(I
C
=-500mAdc,I
B
=-50mAdc)
Current-Gain-Bandwidth Product
(V
CE
=5.0V, f=100MHz, I
C
=10mA)
---
Vdc
µAdc
C
---
---
---
---
---
-0.1
-0.1
µAdc
-0.2
-0.2
-0.1
µAdc
D
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
100
40
---
---
630
---
-0.7
-1.2
---
---
Vdc
C
B
C
E
B
E
G
Vdc
STRAIGHT LEAD BENT LEAD
BULK PACK
AMMO PACK
DIMENSIONS
SMALL SIGNAL CHARACTERISTICS
f
T
260
---
MHz
DIM
A
B
C
D
E
G
hFE CLASSIFICATION
Classification
h
FE(1)
Marking Code
16
100~250
A 011
25
160~400
B 011
40
250~630
C 011
INCHES
MIN
.175
.175
.500
.016
.135
.095
.173
MM
MAX
.185
.185
---
.020
.145
.105
.220
MIN
4.45
4.45
12.70
0.41
3.43
2.42
4.40
MAX
4.70
4.70
---
0.63
3.68
2.67
5.60
NOTE
Straight Lead
Bent Lead
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
www.mccsemi.com
Revision: D
1 of 3
2013/01/01

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