BLF7G20L-90P;
BLF7G20LS-90P
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
90 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to
1880 MHz and 2110 MHz to 2170 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
CW
GSM EDGE
f
(MHz)
1805 to 1880
1805 to 1880
I
Dq
(mA)
550
550
V
DS
(V)
28
28
P
L(AV)
(W)
84
40
G
p
(dB)
19
19.5
D
(%)
54
41
ACPR
400k
(dBc)
-
61
ACPR
600k
(dBc)
-
74
EVM
rms
(%)
-
2.5
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (1427 MHz to1525 MHz, 1805 MHz to 1880 MHz
and 2110 MHz to 2170 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the frequency
bands of 1427 MHz to 1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to
2170 MHz.
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF7G20L-90P (SOT1121A)
1
2
1
3
5
3
4
2
sym117
5
4
BLF7G20LS-90P (SOT1121B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF7G20L-90P
BLF7G20LS-90P
-
-
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
earless flanged LDMOST ceramic package; 4 leads
Version
SOT1121A
SOT1121B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
18
+150
200
Unit
V
V
A
C
C
BLF7G20L-90P_7G20LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 15
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 90 W
Typ
Unit
0.49 K/W
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 50 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 2.5 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 1.75 A
Min Typ
65
1.5
-
8.2
-
-
-
-
1.9
-
9.5
-
3.8
0.28
Max Unit
-
2.3
2
-
200
-
-
V
V
A
A
nA
S
7. Test information
Table 7.
Application information
f = 1805 MHz to 1880 MHz; RF performance at V
DS
= 28 V; I
Dq
= 550 mA; T
case
= 25
C;
2 sections combined unless otherwise specified; in a class-AB production test circuit.
Symbol
G
p
RL
in
D
Parameter
power gain
input return loss
drain efficiency
Conditions
Min Typ
18.3 19.5
-
38
-
-
-
-
15
41
61
74
2.5
8
Max
-
8
-
58
3.8
12.5
-
-
Unit
dB
dB
%
dBc
%
%
dB
%
Mode of operation: GSM EDGE; P
L(AV)
= 40 W
ACPR
400k
adjacent channel power ratio (400 kHz)
ACPR
600k
adjacent channel power ratio (600 kHz)
EVM
rms
EVM
M
G
p
D
RMS EDGE signal distortion error
peak EDGE signal distortion error
power gain
drain efficiency
70.5
dBc
Mode of operation: CW; P
L(AV)
= 84 W
17.8 19
51
54
BLF7G20L-90P_7G20LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 15
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
7.1 Ruggedness in class-AB operation
The BLF7G20L-90P and BLF7G20LS-90P are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 550 mA; P
L
= 90 W (CW), f = 1805 MHz,
V
DS
= 28 V; I
Dq
= 380 mA; P
L
= 40 W (CW, half device), f = 2110 MHz,
V
DS
= 28 V; I
Dq
= 380 mA; P
L
= 55 W (CW pulse, 10 %, 100
s,
halve device),
f = 1427 MHz.
7.2 One-tone CW
22
G
p
(dB)
21
20
G
p
19
18
17
16
15
0
20
40
60
80
40
30
20
10
0
100
P
L
(W)
001aal867
70
η
D
(%)
60
50
η
D
V
DS
= 28 V; I
Dq
= 550 mA; f = 1880 MHz.
Fig 1. One-tone CW power gain and drain efficiency as function of load power;
typical values
BLF7G20L-90P_7G20LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 15
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
7.3 Two-tone CW
22
G
p
(dB)
21
20
G
p
19
18
17
16
15
0
10
20
30
40
50
60
P
L
(W)
70
η
D
40
−40
30
20
10
0
−80
IMD7
IMD5
001aal868
70
η
D
(%)
60
50
0
IMD
(dBc)
−20
001aal869
IMD3
−60
0
10
20
30
40
50
60
P
L
(W)
70
V
DS
= 28 V; I
Dq
= 550 mA; f
1
= 1879.95 MHz;
f
2
= 1880.05 MHz.
V
DS
= 28 V; I
Dq
= 550 mA; f
1
= 1879.95 MHz;
f
2
= 1880.05 MHz.
Fig 2. Two-tone CW power gain and drain efficiency
as function of load power; typical values
Fig 3. Two-tone CW intermodulation distortion as a
function of load power; typical values
7.4 GSM EDGE
21
G
p
(dB)
20
G
p
19
18
17
16
15
14
0
10
20
30
40
50
60
P
L
(W)
70
η
D
50
40
30
−70
20
10
0
−80
ACPR
600k
001aal870
70
η
D
(%)
60
−50
ACPR
(dBc)
−60
ACPR
400k
001aal871
0
10
20
30
40
50
60
P
L
(W)
70
V
DS
= 28 V; I
Dq
= 550 mA; f = 1880 MHz.
V
DS
= 28 V; I
Dq
= 550 mA; f = 1880 MHz.
Fig 4.
GSM EDGE power gain and drain efficiency as
function of load power; typical values
Fig 5.
GSM EDGE ACPR at 400 kHz and at 600 kHz as
function of load power; typical values
BLF7G20L-90P_7G20LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
5 of 15
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