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BA779-HG3-08

Description
PIN Diodes 30V 50mA AUTO
CategoryDiscrete semiconductor    diode   
File Size98KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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BA779-HG3-08 Overview

PIN Diodes 30V 50mA AUTO

BA779-HG3-08 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionR-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
applicationATTENUATOR
ConfigurationSINGLE
Maximum diode capacitance0.5 pF
Diode component materialsSILICON
Diode typePIN DIODE
frequency bandHIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Minority carrier nominal lifetime4 µs
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
GuidelineAEC-Q101
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
BA779-G
www.vishay.com
Vishay Semiconductors
RF PIN Diodes
FEATURES
• Wide frequency range 10 MHz to 1 GHz
3
• AEC-Q101 qualified
• Base P/N-HG3 - green, automotive grade
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
1
2
APPLICATIONS
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
• Current controlled HF resistance in adjustable
attenuators
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.1 mg
Packaging codes/options:
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BA779-G
ORDERING CODE
BA779-HG3-08
TYPE MARKING
PH1
CIRCUIT
CONFIGURATION
Single
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PART
Reverse voltage
Forward continuous current
TEST CONDITION
SYMBOL
V
R
I
F
VALUE
30
50
UNIT
V
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Operating temperature range
TEST CONDITION
on PC board
50 mm x 50 mm x 1.6 mm
SYMBOL
R
thJA
T
j
T
stg
T
op
VALUE
500
125
-55 to +150
-55 to +125
UNIT
K/W
°C
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Diode capacitance
Differential forward resistance
Reverse impedance
Minority carrier lifetime
TEST CONDITION
I
F
= 20 mA
V
R
= 30 V
f = 100 MHz, V
R
= 0 V
f = 100 MHz, I
F
= 1.5 mA
f = 100 MHz, V
R
= 0 V
I
F
= 10 mA, I
R
= 10 mA
BA779-G
PART
SYMBOL
V
F
I
R
C
D
r
f
z
r
5
4
MIN.
TYP.
MAX.
1
0.05
0.5
50
UNIT
V
μA
pF
k
μs
Rev. 1.3, 27-Apr-17
Document Number: 83321
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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