NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2 MARCH 1994
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
= 1 Watt
ZTX457
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
300
300
5
1
500
1
-55 to +200
UNIT
V
V
V
A
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
MIN.
300
300
5
100
10
100
0.3
1
1
50
50
25
75
TYP.
MAX.
UNIT
V
V
V
nA
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=100
µ
A
V
CB
=200V
V
CB
=200V, T
amb
=100°C
V
EB
=4V
I
C
=100mA, I
B
=10mA*
I
C
=100mA, I
B
=10mA*
IC=100mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V*
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V*
MHz
I
C
=50mA, V
CE
=10V
f=20MHz
µ
A
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
nA
V
V
V
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
f
T
300
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3-181
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